Datasheet > GT75HH120T2H

GT75HH120T2H

更新时间： 2024-09-27 17:15:47

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
7页	482K
描述
IGBT H-Bridge-1200V

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中文翻译

获取价格

数据手册

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GT75HH120T2H 数据手册

GT75HH120T2H

Preliminary Data

IGBT Module

Features：

Short Circuit Rated 10μs

Low Saturation Voltage: VCE (sat) = 1.90V @ IC =75A , TC=25℃

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Welding Machine、Cutting Machine

Plating Power Supply、Induction Heating

SMPS、UPS

IGBT, Inverter

Maximum Rated Values(T_C=25℃Unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

1200

±20

T_C= 80℃,

T_C= 25℃

T_J= 175℃

Continuous Collector Current

I_C

150

>10

520

I_CM

t_SC

P_D

Peak Collector Current Repetitive

Short Circuit Withstand Time

μs

T_C= 25℃

Maximum Power Dissipation (IGBT)

_Jmax=175℃

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Page 1 Rev. 02

07/05/2015

12 3 4 5 6 7

中文翻译

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