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GT75HH120T2H PDF预览

GT75HH120T2H

更新时间: 2024-11-21 17:15:47
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
7页 482K
描述
IGBT H-Bridge-1200V

GT75HH120T2H 数据手册

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GT75HH120T2H  
Preliminary Data  
IGBT Module  
Features:  
z
z
z
z
z
z
Short Circuit Rated 10μs  
Low Saturation Voltage: VCE (sat) = 1.90V @ IC =75A , TC=25℃  
Low Switching Loss  
100% RBSOA Tested2×Ic)  
Low Stray Inductance  
Lead Free, Compliant with RoHS Requirement  
Applications:  
z
z
z
Welding MachineCutting Machine  
Plating Power SupplyInduction Heating  
SMPSUPS  
IGBT, Inverter  
Maximum Rated Values(TC=25Unless otherwise specified)  
VCES  
VGES  
Collector-Emitter Blocking Voltage  
Gate-Emitter Voltage  
1200  
±20  
75  
V
V
TC = 80,  
TC = 25℃  
TJ = 175℃  
A
Continuous Collector Current  
IC  
150  
150  
>10  
520  
A
ICM  
tSC  
PD  
Peak Collector Current Repetitive  
Short Circuit Withstand Time  
A
μs  
W
TC = 25℃  
Maximum Power Dissipation (IGBT)  
T
Jmax=175℃  
www.njsme.com  
2015 NJSME All rights reserved  
Page 1 Rev. 02  
07/05/2015  

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连接器类型:端子;线束品:无;额定电流:3.0 A;(AC)额定电压:AC 250.0 V