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GT75HF120T1VH-M PDF预览

GT75HF120T1VH-M

更新时间: 2024-06-26 08:51:41
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
9页 299K
描述
IGBT Half Bridge-1200V

GT75HF120T1VH-M 数据手册

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GT75HF120T1VH-M  
Preliminary Data  
IGBT Module  
Features  
Field Stop Trench Gate IGBT  
Short Circuit Rated>10μs  
Low Saturation Voltage  
Low Switching Loss  
100% RBSOA Tested2×Ic)  
Low Stray Inductance  
Lead Free, Compliant with RoHS Requirement  
Applications:  
Welding MachineCutting Machine  
Plating Power SupplyInduction Heating  
SMPSUPS  
Maximum Rated Values of IGBT(T=25unless otherwise specified)  
VCES  
VGES  
Collector-mitter Blog Vltage  
Gate-Emitter Vltage  
1200  
±20  
75  
V
V
TC = 100℃  
TC = 25℃  
TJ = 175℃  
A
IC  
ContinuouCollector Current  
150  
150  
>10  
540  
A
ICM  
tSC  
PD  
Repetite Peak Collector Current  
Short Circuit Withstand Time  
A
μs  
W
TC = 25  
Maximum Power Dissipation per IGBT  
T
Jmax=175℃  
www.njsme.com  
2018 NJSME All rights reserved  
Page 1 Rev. 01  
04/10/2018  

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