Datasheet > GT75HF120T1H-M

GT75HF120T1H-M

更新时间： 2024-11-19 17:15:43

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
9页	322K
描述
IGBT Half Bridge-1200V

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中文翻译

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数据手册

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GT75HF120T1H-M 数据手册

GT75HF120T1H-M

Preliminary Data

IGBT Module

Features：



Field Stop Trench Gate IGBT

Short Circuit Rated ＞10μs

Low Saturation Voltage

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：



Industrial Inverters

Servo Applications

IGBT, Inverter

Maximum Rated Values(T_C= 25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

1200

±20

T_C= 100℃

T_C= 25℃

T_J= 175℃

I_C

Continuous Collector Current

150

>10

555

I_CM

t_SC

P_D

Peak Collector Current Repetitive

Short Circuit Withstand Time

μs

T_C= 25℃

Maximum Power Dissipation (IGBT)

_Jmax=175℃

www.njsme.com

Page 1 Rev.01

05/14/2020

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