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GT75FF120T5H PDF预览

GT75FF120T5H

更新时间: 2024-11-20 17:15:35
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
8页 531K
描述
IGBT Full Bridge-1200V

GT75FF120T5H 数据手册

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GT75FF120T5H  
IGBT Module  
Features  
z
z
z
z
z
z
Short Circuit Rated>10μs  
Low Saturation Voltage: VCE (sat) = 1.90V @ IC =75A , TC=25  
Low Switching Loss  
100% RBSOA Tested2×Ic)  
Low Stray Inductance  
Lead Free, Compliant with RoHS Requirement  
Applications:  
z
z
z
Industrial Inverters  
Motor Drives  
UPS Systems  
IGBT, Inverter  
Maximum Rated Values (TC=25unless otherwise specified)  
VCES  
VGES  
Collector-Emitter Blocking Voltage  
Gate-Emitter Voltage  
1200  
±20  
75  
V
V
TC = 80,  
TC = 25℃  
TJ = 175℃  
A
IC  
Continuous Collector Current  
150  
150  
>10  
520  
A
ICM(1)  
tSC  
Peak Collector Current Repetitive  
Short Circuit Withstand Time  
A
μs  
W
TC = 25℃  
PD  
Maximum Power Dissipation per IGBT  
T
Jmax=175℃  
www.njsme.com  
2019 NJSME All rights reserved  
Page 1 Rev. A  
07/07/2019  

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