Datasheet > GT600SD65T2ZH-M

GT600SD65T2ZH-M

更新时间： 2024-11-15 17:15:15

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
9页	561K
描述
IGBT Single-650V

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中文翻译

获取价格

数据手册

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GT600SD65T2ZH-M 数据手册

GT600SD65T2ZH-M

Preliminary Data

IGBT Module

Features：



Field Stop Trench Gate IGBT

Short Circuit Rated>10μs

Low Saturation Voltage

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：



Induction Heating

UPS Systems

High Power converters



IGBT, Inverter

Maximum Rated Values of IGBT (T_C=25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

650

±20

T_C=100℃

T_C=25℃

T_J=175℃

600

I_C

Continuous Collector Current

1200

>10

I_CM

t_SC

P_D

Peak Collector Current Repetitive

Short Circuit Withstand Time

μss

T_C=25℃

T_Jmax=175℃

Maximum Power Dissipation (IGBT)

2450

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