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GT600HF120T9H-M PDF预览

GT600HF120T9H-M

更新时间: 2024-09-30 17:15:31
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
10页 356K
描述
IGBT Half Bridge-1200V

GT600HF120T9H-M 数据手册

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GT600HF120T9H-M  
IGBT Module  
Features:  
Trench & Field Stop IGBT  
Short Circuit Rated10μs  
Low Switching Loss  
100% RBSOA Tested2×Ic)  
Low Stray Inductance  
Copper Wire Bonding on Power Terminal  
Lead Free, Compliant with RoHS Requirement  
Applications:  
Hybrid Electrical Vehicles(H)EV  
Automotive Applications  
Commercial Agriculture Vehicles  
Motor Drives  
IGBT, Inverter  
Maximum Rated Values(TC=25unless otherwise specified)  
VCES  
VGES  
Collector-Emitter Blocking Voltage  
Gate-Emitter Voltage  
1200  
±20  
V
V
TC=100  
TC=25℃  
TJ=175℃  
600  
A
Continuous Collector Current  
IC  
1160  
1200  
>10  
A
ICM  
tSC  
PD  
Peak Collector Current Repetitive  
Short Circuit Withstand Time  
A
μs  
W
TC=25℃  
TJmax=175℃  
Maximum Power Dissipation (IGBT)  
3950  
www.njsme.com  
2019 NJSME All rights reserved  
Page 1 REV.A  
05/08/2019  

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