Datasheet > GT600HF120A4H

GT600HF120A4H

更新时间： 2024-11-15 17:15:39

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
7页	558K
描述
IGBT Half Bridge-1200V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GT600HF120A4H 数据手册

GT600HF120A4H

Preliminary Data

Features：

Short Circuit Rated 10μs

Low Saturation Voltage: V_{CE (sat)}= 1.90V @ I_C= 600A , T_C=25℃

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Industrial Inverters

Servo Applications

Maximum Rated Values of IGBT(T_C=25℃ unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

1200

±20

T_C= 80℃,

T_C= 25℃

T_J= 175℃

600

I_C

Continuous Collector Current

1000

1200

>10

I_CM

t_SC

P_D

Repetitive Peak Collector Current

Short Circuit Withstand Time

μs

T_C= 25℃

T_Jmax=175℃

Maximum Power Dissipation per IGBT

3480

www.njsme.com

Page 1 Rev. 01

04/18/2015

12 3 4 5 6 7

中文翻译

下载PDF

与GT600HF120A4H相关器件

型号	品牌	获取价格	描述	数据表
GT600HF120T9H-M	SILVERMICRO	获取价格	IGBT Half Bridge-1200V
GT600SD120T2ZH-M	SILVERMICRO	获取价格	IGBT Single-1200V
GT600SD65T2ZH-M	SILVERMICRO	获取价格	IGBT Single-650V
GT60-10	FRONTIER	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon,
GT605	TSC	获取价格	6.0 AMPS. Glass Passivated Rectifiers
GT605G	TAITRON	获取价格	6 Amp Glass Passivated Quick Connect Rectifier
GT60J101	TOSHIBA	获取价格	TRANSISTOR 60 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transist
GT60J321	TOSHIBA	获取价格	The 4th Generation Soft Switching Applications
GT60J322	TOSHIBA	获取价格	The 4th Generation Soft Switching Applications
GT60J323	TOSHIBA	获取价格	Gate Bipolar Transistor Silicon N Channel IGBT