Datasheet > GT5350E

GT5350E

更新时间： 2024-04-09 19:02:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	446K
描述
50V,3A,General Purpose PNP Bipolar Transistor

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GT5350E 数据手册

General Purpose Transistors PNP Silicon

GT5350E

Features



Low collector-emitter saturation voltage V_CE(sat)and corresponding

Low R_CE(sat)



High collector current capability

High collector current gain

Improved efficiency due to reduced heat generation

Mechanical Data



Case: SOT-89

Molding compound, UL flammability classification rating 94V-0

Terminals: Matte tin plated leads, solderable per MIL-STD-202,

Method 208

SOT-89

Ordering Information

Part Number

Package

Shipping

Marking Code

GT5350E

SOT-89

1000 pcs / Tape & Reel

T5350

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Symbol

Parameter

Value

Units

MAXIMUM RATINGS

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

-50

-5

Emitter-Base Voltage

Collector Current - Continuous

Collector Current - Peak

-3

I_CM

-5

Thermal Characteristic

P_tot

0.55

125

°C/W

℃

Total Power Dissipation, T_a≤25℃

Thermal Resistance (Junction-to-Ambient)

Thermal Resistance (Junction-to- Case)

Thermal Resistance (Junction-to-Lead)

Junction Temperature

(Note1)

R_θJA

R_θJC

R_θJL

(Note1)

T_J

T_STG

-65 to +150

Junction and Storage Temperature

℃

Note 1: Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.

STM0291A: August 2022

www.gmesemi.com

12 3 4

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