Datasheet > GT5350

GT5350

更新时间： 2024-11-15 17:02:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	342K
描述
50V,2A,General Purpose PNP Bipolar Transistor

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中文翻译

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数据手册

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GT5350 数据手册

PNP Silicon Epitaxial Planar Transistor

GT5350

Features



Low Collector-Emitter saturation voltage V_CE(sat)

and corresponding low R_CE(sat)

High collector current capability

High collector current gain



Improved efficiency due to reduced heat generation

Mechanic al Data



Case: SOT-23

SOT-23

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

53: PN Code

yww: D/C(y / Year, ww / Week)

GT5350

SOT-23

3000pcs / Tape & Reel

53yww

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Pulse)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-50

-5

Unit

-2

I_CM

-4

Equivalent On-Resistance

R_CE(sat)

135

mΩ

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

300

Unit

°C/W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Junction Temperature Range

R_θJA

R_θJC

R_θJL

T_J

264

118

-55 ~ +150

-65 ~ +150

Storage Temperature Range

T_STG

°C

STM0259A: December 2022 [1.4]

www.gmesemi.com

12 3 4

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