Datasheet > GT50FF120A1H

GT50FF120A1H

更新时间： 2024-11-19 17:15:43

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
8页	716K
描述
IGBT Full Bridge-1200V

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中文翻译

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数据手册

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GT50FF120A1H 数据手册

GT50FF120A1H

Preliminary Data

IGBT Module

Features：

Short Circuit Rated 10μs

Low Saturation Voltage: V_{CE (sat)}= 1.90V @ I_C= 50A , T_C=25℃

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Industrial Inverters

Servo Applications

IGBT, Inverter

Maximum Rated Values (T_C=25℃ unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

1200

±20

T_C= 80℃,

T_C= 25℃

T_J= 175℃

I_C

Continuous Collector Current

100

>10

500

I_CM

t_SC

P_D

Repetitive Peak Collector Current

Short Circuit Withstand Time

μs

T_C= 25℃

Maximum Power Dissipation per IGBT

_Jmax=175℃

www.njsme.com

Page 1 Rev. 02

07/30/2015

12 3 4 5 6 7 8

中文翻译

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