Datasheet > GT50FB60A1H

GT50FB60A1H

更新时间： 2024-09-24 17:15:31

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
12页	831K
描述
IGBT Seven Pack-600V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GT50FB60A1H 数据手册

GT50FB60A1H

Preliminary Date

IGBT Module

Features：

Short Circuit Rated ＞5μs

Low Saturation Voltage: V_{CE (sat)}= 1.90V @ I_C= 50A , T_C=25℃

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Industrial Inverters

Servo Applications

UPS Systems

IGBT, Inverter

Maximum Rated Values(T_C=25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

600

±20

T_C= 100℃

T_C= 25℃

T_J= 175℃

Continuous Collector Current

I_C

I_CM

t_SC

P_D

Peak Collector Current Repetitive

Short Circuit Withstand Time

100

μs

T_C= 25℃

T_Jmax=175℃

Maximum Power Dissipation (IGBT)

280

www.njsme.com

Page 1 Rev. 02

03/28/2018

12 3 4 5 6 7...12

中文翻译

下载PDF

与GT50FB60A1H相关器件

型号	品牌	获取价格	描述	数据表
GT50FF120A1H	SILVERMICRO	获取价格	IGBT Full Bridge-1200V
GT50FF120T5H	SILVERMICRO	获取价格	IGBT Full Bridge-1200V
GT50G102	TOSHIBA	获取价格	TRANSISTOR 50 A, 400 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor
GT50G321	TOSHIBA	获取价格	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J101	TOSHIBA	获取价格	TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transist
GT50J102	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT50J121	TOSHIBA	获取价格	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J121_06	TOSHIBA	获取价格	Silicon N Channel IGBT High Power Switching Applications
GT50J122	TOSHIBA	获取价格	Current Resonance Inverter Switching Application
GT50J123	TOSHIBA	获取价格	Insulated Gate Bipolar Transistor