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GT4350R PDF预览

GT4350R

更新时间: 2024-11-21 17:01:15
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 490K
描述
50V,3A,General Purpose NPN Bipolar Transistor

GT4350R 数据手册

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NPN Silicon Epitaxial Planar Transistor  
GT4350R  
Features  
Low Collector-Emitter saturation voltage VCE(sat)  
and corresponding low RCE(sat)  
High collector current capability  
High collector current gain  
Improved efficiency due to reduced heat generation  
Mechanic al Data  
Case: SOT-223  
Molding compound: UL flammability classification rating 94V-0  
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-223  
Ordering Information  
Part Number  
Package  
SOT-223  
Shipping Quantity  
Marking Code  
GT4350R  
4000 pcs / Tape & Reel  
T4350  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Current (Continuous)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
50  
50  
5
V
V
3
A
Thermal Characteristics  
Parameter  
Power Dissipation *1  
Symbol  
PD  
Value  
1.15  
Unit  
W
Thermal Resistance Junction-to-Air  
Junction Temperature Range  
Storage Temperature Range  
RθJA  
TJ  
227  
°C/W  
°C  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
STM0457A: June 2020  
www.gmesemi.com  
1

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