Datasheet > GT4350E

GT4350E

更新时间： 2024-11-07 17:00:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	440K
描述
50V,3A,Medium Power NPN Bipolar Transistor

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中文翻译

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数据手册

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GT4350E 数据手册

NPN Silicon Epitaxial Planar Transistor

GT4350E

Features



Low collector-emitter saturation voltage V_CE(sat)

and corresponding low R_CE(sat)

High collector current capability

High collector current gain



Improved efficiency due to reduced heat generation

Mechanical Data



Case: SOT-89

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-89

Ordering Information

Part Number

Package

SOT-89

Shipping Quantity

Marking Code

GT4350E

1000 pcs / Tape & Reel

T4350

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Thermal Characteristics

Parameter

Power Dissipation (T_A= 25°C ) ^*1

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Lead

Power Dissipation (T_A= 25°C ) ^*2

Thermal Resistance Junction-to-Air ^*2

Power Dissipation (T_A= 25°C ) ^*3

Thermal Resistance Junction-to-Air ^*3

Power Dissipation (T_A= 25°C ) ^*4

Thermal Resistance Junction-to-Air ^*4

Junction Temperature Range

Symbol

P_D

Value

0.55

227

Unit

R_θJA

R_θJC

R_θJL

P_D

°C /W

142

2.5

R_θJA

P_D

°C /W

2.9

R_θJA

P_D

°C /W

3.1

R_θJA

T_J

°C /W

°C

-65 ~ +150

Storage Temperature Range

T_STG

°C

STM0279A: January 2023 [1.2]

www.gmesemi.com

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