型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT40G121 | TOSHIBA |
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
GT40J121 | TOSHIBA |
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Discrete IGBTs Silicon N-Channel IGBT | |
GT40J321 | TOSHIBA |
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TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1C, 3 PIN, Insulated Gate BIP | |
GT40J322 | TOSHIBA |
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TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1C, 3 PIN, Insulated Gate BIP | |
GT40J325 | TOSHIBA |
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TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16F1S, TO-3P(N)IS, 3 PIN, Insula | |
GT40M101 | TOSHIBA |
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N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | |
GT40M301 | TOSHIBA |
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N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS) | |
GT40PI120T5H | SILVERMICRO |
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PIM IGBT-1200V | |
GT40Q321 | TOSHIBA |
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Voltage Resonance Inverter Switching Application | |
GT40Q321_06 | TOSHIBA |
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Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |