Datasheet > GT28F320D18B110

GT28F320D18B110

更新时间： 2024-11-20 23:54:15

品牌	Logo	应用领域
其他 - ETC		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
83页	790K
描述
x16 Flash EEPROM

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GT28F320D18B110 数据手册

1.8 Volt Intel^®Dual-Plane Flash Memory

28F320D18 (x16)

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Product Features

■ 32-Mbit density with 16-Bit Data Bus

■ High Performance Reads

■ Flexible Blocking Architecture

— Eight, 4-Kword Parameter Code/Data Blocks

— 110/40 ns 4-Word Page Mode

— 40 MHz (110/20 ns) Zero Wait-State

Synchronous Burst Mode

— Sixty-three, 32-Kword Main Code/Data

Blocks

■ Enhanced Data Protection

■ Dual Partition Architecture

— V_PP= GND Absolute Write Protection

— 25%/75% Partition Sizes

32 Mb 8 Mb + 24 Mb

— Erase/Program Lockout during Power

Transitions

— Program or Erase during Reads

— Status Register for Each Partition

■ Low Power Operation

— Individual Dynamic Zero-Latency Block

Locking

— Individual Block Lock-Down

■ Automated Program/Erase Algorithms

— 1.8 V Read and Write Operations

— V_CCQfor I/O Isolation and System

Compatibility

— 1.8 V Low-Power 22 µs/Word (Typ)

Programming

— 12 V No Glue Logic 8 µs/Word (Typ)

Production Programming and 1.1 sec Erase

(Typ)

— Automatic Power Savings Mode

■ Enhanced Code + Data Storage

— Flash Data Integrator (FDI) Software

Optimized

— 5 µs Typical Program/Erase Suspends

■ 128-Bit Protection Register

■ Cross-Compatible Command Support

— Intel Basic Command Set

— Common Flash Interface (CFI)

■ Extended Temperature –40° C to +85° C

■ Minimum 100,000 Block Erase Cycles

■ ETOX™ VI Flash Technology (0.25 µm)

— 64 Unique Device Identifier Bits

— 64 User-Programmable OTP Bits

■ µBGA* CSP 60-Ball 7x8 Matrix (four support

balls)

The 1.8 Volt Intel^®Dual-Plane Flash memory provides high performance asynchronous and synchronous

burst reads. It is an ideal memory for low-voltage burst CPUs. Combining high read performance with flash

memory’s intrinsic nonvolatility, 1.8 Volt Dual-Plane Flash memory eliminates the traditional system-

performance paradigm of shadowing redundant code memory from slow nonvolatile storage to faster

execution memory. It reduces the total memory requirement that increase reliability and reduces overall

system power consumption and cost.

The 1.8 Volt Dual-Plane Flash memory’s two partitions allow background programming or erasing to occur

in one partition while program-execution reads take place in the other partition. This allows for higher data

write throughput compared to single partition architectures. The dual partition architecture also allows two

processors to interleave code operations while program and erase operations take place in the background.

1.8 Volt Dual-Plane Flash memory is manufactured on Intel^®0.25 µm ETOX™ VI process technology. It is

available in an industry-standard µBGA* CSP package which is ideal for board-constrained applications.

Order Number: 290672-002

October 1999

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与GT28F320D18B110相关器件

型号	品牌	获取价格	描述	数据表
GT28F320D18B120	ETC	获取价格	x16 Flash EEPROM
GT28F320S3-100	INTEL	获取价格	WORD-WIDE FlashFile⑩ MEMORY FAMILY
GT28F320S3-110	INTEL	获取价格	Flash, 2MX16, 110ns, PBGA56
GT28F320S3-120	INTEL	获取价格	WORD-WIDE FlashFile⑩ MEMORY FAMILY
GT28F320S3-140	INTEL	获取价格	Flash, 2MX16, 140ns, PBGA56
GT28F320W18B70	NUMONYX	获取价格	Flash, 2MX16, 70ns, PBGA56, VFBGA-56
GT28F320W18B85	NUMONYX	获取价格	Flash, 2MX16, 85ns, PBGA56, VFBGA-56
GT28F320W18BC60	INTEL	获取价格	Intel㈢ Wireless Flash Memory
GT28F320W18BC80	INTEL	获取价格	Intel㈢ Wireless Flash Memory
GT28F320W18BD60	INTEL	获取价格	Intel㈢ Wireless Flash Memory

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