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GT28F320C3TC100 PDF预览

GT28F320C3TC100

更新时间： 2024-11-21 21:10:35
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路
页数 文件大小 规格书
70页 903K
描述
Flash, 2MX16, 100ns, PBGA48, CSP, MICRO, BGA-48

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GT28F320C3TC100 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：CSP, MICRO, BGA-48针数：48
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.58
最长访问时间：100 ns其他特性：USER-SELECTABLE 3V OR 12V VPP; NO ADDITIONAL SYSTEM LOGIC; TOP BOOT BLOCK
启动块：TOPJESD-30 代码：R-PBGA-B48
长度：13 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：48
字数：2097152 words字数代码：2000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：2MX16
封装主体材料：PLASTIC/EPOXY封装代码：TBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE
并行/串行：PARALLEL编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM类型：NOR TYPE
宽度：10 mmBase Number Matches：1

GT28F320C3TC100 数据手册

 浏览型号GT28F320C3TC100的Datasheet PDF文件第2页浏览型号GT28F320C3TC100的Datasheet PDF文件第3页浏览型号GT28F320C3TC100的Datasheet PDF文件第4页浏览型号GT28F320C3TC100的Datasheet PDF文件第5页浏览型号GT28F320C3TC100的Datasheet PDF文件第6页浏览型号GT28F320C3TC100的Datasheet PDF文件第7页 
3 Volt Advanced+ Boot Block Flash  
Memory  
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)  
Preliminary Datasheet  
Product Features  
■ Flexible SmartVoltage Technology  
—2.7 V–3.6 V Read/Program/Erase  
—12 V for Fast Production Programming  
■ High Performance  
—2.7 V–3.6 V: 70 ns Max Access Time  
■ Optimized Architecture for Code Plus Data  
Storage  
■ Improved 12 V Production Programming  
—Faster Production Programming  
—No Additional System Logic  
■ 128-bit Protection Register  
—64-bit Unique Device Identifier  
—64-bit User Programmable OTP Cells  
■ Extended Cycling Capability  
—Minimum 100,000 Block Erase Cycles  
■ Supports Flash Data Integrator Software  
—Flash Memory Manager  
—Eight 4-Kword Blocks, Top or Bottom  
Locations  
—Up to One Hundred-Twenty-Seven 32-  
Kword Blocks  
—System Interrupt Manager  
—Fast Program Suspend Capability  
—Fast Erase Suspend Capability  
■ Flexible Block Locking  
—Supports Parameter Storage, Streaming  
Data (e.g., voice)  
■ Automated Word/Byte Program and Block  
—Lock/Unlock Any Block  
Erase  
—Command User Interface  
—Full Protection on Power-Up  
—WP# Pin for Hardware Block Protection  
—VPP = GND Option  
—Status Registers  
■ Cross-Compatible Command Support  
—Intel Basic Command Set  
—VCC Lockout Voltage  
—Common Flash Interface  
■ Low Power Consumption  
—9 mA Typical Read Power  
—7 µA Typical Standby Power with  
Automatic Power Savings Feature  
■ Extended Temperature Operation  
—–40 °C to +85 °C  
■ x16 I/O for Various Applications  
—48-Ball µBGA* Package  
—48-Ball VF BGA Package  
—64-Ball Easy BGA Package  
—48-Lead TSOP Package  
■ 0.18 µ ETOX™ VII Flash Technology  
The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ  
technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+  
Boot Block Flash memory devices incorporate low voltage capability (2.7 V read, program and  
erase) with high-speed, low-power operation. Flexible block locking allows any block to be  
independently locked or unlocked. Add to this the Intel-developed Flash Data Integrator (FDI)  
software and you have a cost-effective, flexible, monolithic code plus data storage solution.  
Intel® 3 Volt Advanced+ Boot Block products will be available in 48-lead TSOP, 48-ball  
µBGA*, 48-ball Very Thin Profile Fine Pitch BGA (VF BGA), and 64-ball Easy BGA  
packages. Additional information on this product family can be obtained by accessing the Intel®  
Flash website: http://www.intel.com/design/flash.  
Notice: This document contains preliminary information on new products in production. The  
specifications are subject to change without notice. Verify with your local Intel sales office that  
you have the latest datasheet before finalizing a design.  
Order Number: 290645-009  
April 2000  
1234567...70

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