Datasheet > GT2222A

GT2222A

更新时间： 2024-11-18 04:19:55

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	105K
描述
NPN Silicon Planar Epitaxial Transistor

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数据手册

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GT2222A 数据手册

PZT2222A

NPN Silicon Planar Epitaxial Transistor

COLLECTOR

2, 4

SOT-223

1. BASE

BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

EM ITTER

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

Unit

Vdc

Adc

Value

CEO

CBO

6.0

600

1.5

EBO

Collector Current (DC)

C(DC)

Total Device Disspation T =25 C

Junction Temperature

Storage,Temperature

150

-65 to +150

Tstg

Device Marking

PZT2222A=GT2222A

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = 10 mAdc, I =0)

Vdc

(BR)CEO

Vdc

Collector-Base Breakdown Voltage (I =10 µAdc, I =0)

(BR)CBO

6.0

Emitter-Base Breakdown Voltage (I = 10 µAdc, I =0)

(BR)EBO

nAdc

BEX

Base-Emitter Cutoff Current (V = 60 Vdc,V =-3.0Vdc)

Collector-Emitter Cutoff Current (V = 60 Vdc,V =-3.0Vdc)

CEX

100

Emitter-Base Cutoff Current (V = 3.0Vdc, I =0)

EBO

NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the

collector lead min. 0.93 inches.

WEITRON

http://www.weitron.com.tw

12 3 4

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