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GT20J321 PDF预览

GT20J321

更新时间: 2024-11-19 22:32:55
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
7页 332K
描述
High Power Switching Applications Fast Switching Applications

GT20J321 技术参数

生命周期:Lifetime Buy包装说明:LEAD FREE, 2-10R1C, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.22
Is Samacsys:N其他特性:HIGH SPEED
外壳连接:ISOLATED最大集电极电流 (IC):20 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):340 ns
标称接通时间 (ton):170 nsBase Number Matches:1

GT20J321 数据手册

 浏览型号GT20J321的Datasheet PDF文件第2页浏览型号GT20J321的Datasheet PDF文件第3页浏览型号GT20J321的Datasheet PDF文件第4页浏览型号GT20J321的Datasheet PDF文件第5页浏览型号GT20J321的Datasheet PDF文件第6页浏览型号GT20J321的Datasheet PDF文件第7页 
GT20J321  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT  
GT20J321  
High Power Switching Applications  
Fast Switching Applications  
Unit: mm  
The 4th generation  
Enhancement-mode  
Fast switching (FS): Operating frequency up to 50 kHz (reference)  
High speed: t = 0.04 µs (typ.)  
f
Low switching loss : E = 0.40 mJ (typ.)  
on  
: E = 0.43 mJ (typ.)  
off  
Low saturation voltage: V  
= 2.0 V (typ.)  
CE (sat)  
FRD included between emitter and collector  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
600  
±20  
20  
V
V
CES  
GES  
JEDEC  
DC  
I
C
JEITA  
Collector current  
1 ms  
A
I
40  
CP  
TOSHIBA  
2-10R1C  
DC  
I
20  
F
Emitter-collector forward  
A
Weight: 1.7 g (typ.)  
current  
1 ms  
I
40  
FM  
Collector power dissipation  
(Tc = 25°C)  
P
45  
W
C
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
55 to 150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance (IGBT)  
Thermal resistance (diode)  
R
R
2.78  
4.23  
°C/W  
°C/W  
th (j-c)  
th (j-c)  
Equivalent Circuit  
Collector  
Gate  
Emitter  
1
2002-04-08  

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