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GT20J121

更新时间： 2024-11-20 19:16:27

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GT20J121 技术参数

GT20J121

Discrete IGBTs Silicon N-Channel IGBT

GT20J121

1. Applications

•

Dedicated to Current-Resonant Inverter Switching Applications

•

Dedicated to Partial-Switching Power Factor Correction (PFC) Applications

Note: The product(s) described herein should not be used for any other application.

2. Features

(1) Sixth generation

(2) Enhancement mode

(3) High-speed switching: tf = 0.27 µs (typ.) (IC = 20 A)

(4) Low saturation voltage: VCE(sat) = 1.25 V (typ.) (IC = 20 A)

(5) TO-220SIS (Toshiba package name)

3. Packaging and Internal Circuit

1: Gate

2: Collector

3: Emitter

TO-220SIS

Start of commercial production

2012-09

2014-01-07

Rev.2.0

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
GT20J301	TOSHIBA	获取价格	N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT20J301_06	TOSHIBA	获取价格	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
GT20J311	TOSHIBA	获取价格	N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT20J321	TOSHIBA	获取价格	High Power Switching Applications Fast Switching Applications
GT20J321_06	TOSHIBA	获取价格	Silicon N Channel IGBT High Power Switching Applications
GT20J341	TOSHIBA	获取价格	Discrete IGBTs Silicon N-Channel IGBT
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