是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.72 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 20 A | 集电极-发射极最大电压: | 250 V |
配置: | SINGLE | 门极发射器阈值电压最大值: | 2.4 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 180 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT20D201Y | ETC |
获取价格 |
TRANSISTOR | IGBT | P-CHAN | 250V V(BR)CES | 20A I(C) | TO-247VAR | |
GT20D201-Y | TOSHIBA |
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TRANSISTOR 20 A, 250 V, N-CHANNEL IGBT, 2-21F1C, 3 PIN, Insulated Gate BIP Transistor | |
GT20G101 | TOSHIBA |
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N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | |
GT20G101(SM) | ETC |
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TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 20A I(C) | TO-263VAR | |
GT20G101SM | TOSHIBA |
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N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | |
GT20G102 | TOSHIBA |
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N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | |
GT20G102(SM) | ETC |
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TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 20A I(C) | TO-263VAR | |
GT20G102SM | TOSHIBA |
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N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | |
GT20J101 | TOSHIBA |
获取价格 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
GT20J101_06 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT High Power Switching Applications |