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GT150TL120T2SH PDF预览

GT150TL120T2SH

更新时间: 2024-10-27 17:15:51
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
9页 412K
描述
IGBT Three Level-1200V

GT150TL120T2SH 数据手册

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GT150TL120T2SH  
IGBT Module  
Features  
z
z
z
z
z
z
Short Circuit Rated 10μs  
Low Saturation Voltage: VCE (sat) = 1.90V @ IC = 150A , TC=25  
Low Switching Loss  
100% RBSOA Tested2×Ic)  
Low Stray Inductance  
Lead Free, Compliant with RoHS Requirement  
Application:  
z
3-Level-Applications  
IGBT, Inverter  
Maximum Rated Values (TC=25Unless otherwise specified)  
VCES  
VGES  
Collector-Emitter Blocking Voltage  
Gate-Emitter Voltage  
1200  
±20  
V
V
TC = 80,  
TC = 25℃  
TJ = 175℃  
150  
275  
300  
>10  
1035  
A
IC  
Continuous Collector Current  
A
ICM  
tSC  
PD  
Repetitive Peak Collector Current  
Short Circuit Withstand Time  
A
μs  
W
TC = 25℃  
Maximum Power Dissipation per IGBT  
T
Jmax=175℃  
www.njsme.com  
2015 NJSME All rights reserved  
Page 1 Rev. 04  
12/22/2015  

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