Datasheet > GT10FF120A1H

GT10FF120A1H

更新时间： 2024-09-11 17:15:23

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
8页	616K
描述
IGBT Full Bridge-1200V

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中文翻译

获取价格

数据手册

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GT10FF120A1H 数据手册

GT10FF120A1H

Preliminary Data

IGBT Module

Features：

Short Circuit Rated 10μs

Low Saturation Voltage: VCE (sat) = 1.90V @ IC = 10A , TC=25℃

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Industrial Inverters

Servo Applications

IGBT, Inverter

Maximum Rated Values(T_C=25℃Unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

1200

±20

T_C= 80℃,

T_C= 25℃

T_J= 175℃

Continuous Collector Current

I_C

I_CM

t_SC

P_D

Peak Collector Current Repetitive

Short Circuit Withstand Time

>10

144

μs

T_C= 25℃

Maximum Power Dissipation (IGBT)

_Jmax=175℃

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Page 1 Rev. 01

10/09/2015

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中文翻译

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