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GT100NA120UX PDF预览

GT100NA120UX

更新时间: 2024-01-21 16:03:37
品牌 Logo 应用领域
威世 - VISHAY 双极性晶体管
页数 文件大小 规格书
10页 176K
描述
'High Side Chopper' IGBT SOT-227 (Trench IGBT), 100 A

GT100NA120UX 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-PUFM-X4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.24
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):134 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):463 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):400 ns标称接通时间 (ton):454 ns
VCEsat-Max:2.85 VBase Number Matches:1

GT100NA120UX 数据手册

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GT100NA120UX  
Vishay Semiconductors  
"High Side Chopper" IGBT SOT-227  
(Trench IGBT), 100 A  
FEATURES  
• Trench IGBT technology  
• Very low VCE(on)  
• Square RBSOA  
• HEXFRED® clamping diode  
• 10 μs short circuit capability  
• Fully isolated package  
SOT-227  
• Speed 4 kHz to 30 kHz  
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
• UL approved file E78996  
• Compliant to RoHS directive 2002/95/EC  
PRODUCT SUMMARY  
BENEFITS  
VCES  
1200 V  
100 A at 71 °C  
2.36 V  
• Designed for increased operating efficiency in power  
conversion: UPS, SMPS, welding, induction heating  
IC DC  
VCE(on) typical at 100 A, 25 °C  
• Easy to assemble and parallel  
• Direct mounting on heatsink  
• Plug-in compatible with other SOT-227 packages  
• Low EMI, requires less snubbing  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
134  
92  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 80 °C  
Pulsed collector current  
ICM  
ILM  
270  
270  
87  
A
Clamped inductive load current  
TC = 25 °C  
TC = 80 °C  
Diode continuous forward current  
Gate to emitter voltage  
IF  
59  
VGE  
PD  
20  
V
W
V
TC = 25 °C  
463  
260  
338  
190  
2500  
Power dissipation, IGBT  
TC = 80 °C  
TC = 25 °C  
Power dissipation, diode  
RMS isolation voltage  
PD  
TC = 80 °C  
VISOL  
Any terminal to case, t = 1 min  
Document Number: 93100  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
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