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GSOT12/E9 PDF预览

GSOT12/E9

更新时间: 2024-11-13 10:53:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 33K
描述
Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional,

GSOT12/E9 数据手册

 浏览型号GSOT12/E9的Datasheet PDF文件第2页浏览型号GSOT12/E9的Datasheet PDF文件第3页 
GSOT03 thru GSOT36C  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Miniature Transient Voltage Suppressors  
Mounting Pad Layout  
TO-236AB (SOT-23)  
0.031 (0.8)  
.122 (3.1)  
.110 (2.8)  
0.035 (0.9)  
.016 (0.4)  
Top View  
3
0.079 (2.0)  
0.037 (0.95)  
0.037 (0.95)  
1
2
Dimensions in inches  
and (millimeters)  
.037(0.95)  
.037(0.95)  
GS0Txx  
GS0TxxC  
Top  
View  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Single  
Dual  
Mechanical Data  
Features  
Transient protection for data lines as per  
IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact)  
IEC 1000-4-4 (EFT) 40A (tp = 5/50ns)  
Case: SOT-23 Plastic Package  
Weight: approx. 0.008g  
Terminals: Solderable per MIL-STD-750, method 2026  
IEC 1000-4-5 (Lightning) 24A (tp = 8/20µs)  
High temperature Soldering Guaranteed:  
230°C for 10 seconds.  
• Bidirectional or unidirectional configurations available  
• Devices with a "C" suffix have dual diodes, which  
can protect two unidirectional lines with pin 3 used  
as a common anode connection, or a single  
bidirectional line between pins 1 & 2.  
Packaging Codes – Options:  
E8 – 10K per 13” reel (8mm tape)  
E9 – 3K per 7” reel (8mm tape)  
• Ideal for ESD Protection  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
W
Peak Power Dissipation(1) for 8/20µs pulse  
Forward Surge Current for single 8.3ms half sine wave  
Operating and Storage Temperature Range  
Ppk  
300  
IFSM  
10  
A
TJ, Tstg  
–55 to +150  
°C  
Notes:  
(1) Nonrepetitive current pulse and derate above TA = 25°C. For GSOT03, GSOT03C, GSOT04, GSOT04C the peak power dissipation is 270W.  
(2) FR-5 = 1.0 x 0.75 x 0.62 in.  
Document Number 88347  
20-Jun-02  
www.vishay.com  
1

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