Datasheet > GSOT12C-E3-08

GSOT12C-E3-08

更新时间： 2024-09-24 17:14:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
13页	381K
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中文翻译

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数据手册

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GSOT12C-E3-08 数据手册

UUMMWW

GSOTXXC-E3-08

Features

• Two-line ESD protection device

●

• ESD immunity acc. IEC 61000-4 -2

●

± 30 kV contact discharg e

± 30 kV air discharge

• ESD capability according to AEC-Q101:

human body model: class H3B: > 8 kV

●

• Space saving SOT-23 package

●

• AEC-Q101 qualified available

ABSOLUTE MAXIMUM RATINGS GSOT03C

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Pin 1 to 3 or pin 2 to 3

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Peak pulse current

I_PPM

Pin 1 to 2 or pin 2 to 1; pin 3 not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Pin 1 to 3 or pin 2 to 3

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

369

504

Peak pulse power

ESD immunity

P_PP

Pin 1 to 2 or pin 2 to 1; pin 3 not connected

acc. IEC 61000-4-5, t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

± 30

°C

V_ESD

± 30

Operating temperature

Storage temperature

T _J

-55 to +150

T_STG

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...13

中文翻译

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