ISSUED DATE :2004/11/15
REVISED DATE :
GTM
CORPORATION
GSMBZ5221B~GSMBZ5270B
Description
ZENER DIODES
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
1.10
0.10
1.00
2.20
1.35
2.40
Min.
Max.
A
A1
A2
D
E
HE
0.80
L1
L
b
0.42 REF.
0
0.15
0.25
0.10
0.35
0.40
0.25
0.80
1.80
1.15
1.80
c
e
0.65 REF.
Q1
0.15 BSC.
Thermal Characteristics
Characteristics
Symbol
PD
Max
Unit
Total Device Dissipation FR-5 Board
mW
mW/͠
225
1.8
Ta=25͠, Derate above 25͠
Total Device Dissipation
Alumina Substrate**TA=25͠, Derate above 25͠
mW
mW/͠
300
2.4
PD
Thermal Resistance Junction to Ambient
RǰJA
417
͠/W
Junction and Storage Temperature
Tj,Tstg
-55 to +150
͠
*FR-5 - 1.00.750.062 in. **Alumina-0.40.30.024 in. 99.5% alumina.
Thermal Characteristics (VF=0.9V Max @ IF=10mA for all types.)
Test
Zener Voltage
Vz(V)
ZZK
ZZT
Max. Reverse
Current
Marking
Code
Current
IZT(mA)
IZ=0.25mA
ǡMax
IZ=IZT
Device
Min
Nominal
Max
2.520
2.625
2.835
2.940
3.150
ǡMax
30
IR(uA)
@VR(V)
GSMBZ5221B
GSMBZ5222B
GSMBZ5223B
GSMBZ5224B
GSMBZ5225B
GSMBZ5226B
GSMBZ5227B
GSMBZ5228B
GSMBZ5229B
GSMBZ5230B
GSMBZ5231B
GSMBZ5232B
GSMBZ5233B
GSMBZ5234B
GSMBZ5235B
GSMBZ5236B
GSMBZ5237B
GSMBZ5238B
GSMBZ5239B
GSMBZ5240B
18A
18B
18C
18D
18E
8A
20
2.280
2.375
2.565
2.660
2.850
2.4
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
100
100
75
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
20
2.5
30
20
2.7
30
20
2.8
30
75
20
3.0
29
50
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
3.135
3.420
3.705
4.085
4.465
4.845
5.320
5.700
5.890
6.460
7.125
7.790
8.265
8.645
9.500
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
3.465
3.780
4.095
4.515
4.935
5.355
5.880
6.300
6.510
7.140
7.875
8.610
9.135
9.555
10.500
28
24
25
8B
15
8C
8D
8E
23
10
22
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
19
8F
17
8G
8H
8J
17
7.0
7.0
5.0
6.0
8.0
8.0
10
8K
8L
500
8M
8N
8P
500
600
600
8Q
600
17
GSMBZ5221B~5270B
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