Datasheet > GSIB660N-M3/45

GSIB660N-M3/45

更新时间： 2024-09-19 01:14:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	65K
描述
Single-Phase Single In-Line Bridge Rectifiers

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中文翻译

获取价格

数据手册

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GSIB660N-M3/45 数据手册

GSIB620N, GSIB640N, GSIB660N, GSIB680N

www.vishay.com

Vishay General Semiconductor

Single-Phase Single In-Line Bridge Rectifiers

FEATURES

• UL recognition file number E54214

• Thin single in-Iine package

• Glass passivated chip junction

• High surge current capability

• High case dielectric strength of 1500 V_RMS

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Case Style GSIB-5S

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances, office

equipment, industrial automation applications.

PRIMARY CHARACTERISTICS

Package

GSIB-5S

6.0 A

MECHANICAL DATA

I_F(AV)

Case: GSIB-5S

V_RRM

200 V, 400 V, 600 V, 800 V

Molding compound meets UL 94 V-0 flammability rating

I_FSM

180 A

10 μA

Base P/N-M3

- halogen-free, RoHS compliant, and

I_R

V_F

commercial grade

0.95 V

150 °C

In-Line

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

Diode variations

Polarity: As marked on body

Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum

Recommended Torque: 5.7 cm-kg (5 in-lbs)

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL GSIB620N

GSIB640N

400

GSIB660N

600

GSIB680N

800

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

280

420

560

Maximum DC blocking voltage

400

600

800

(1)

_C= 100 °C

I_F(AV)

6.0

2.8

Maximum average forward rectified

output current at

(2)

T_A= 25 °C

I_F(AV)

Peak forward surge current single sine-wave

I_FSM

180

120

superimposed on rated load (JEDEC method)

Rating for fusing (t < 8.3 ms)

I²t

A²s

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Notes

(1)

Unit case mounted on aluminum plate heatsink

Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length

(2)

Revision: 26-Apr-13

Document Number: 89385

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与GSIB660N-M3/45相关器件

型号	品牌	获取价格	描述	数据表
GSIB680	GULFSEMI	获取价格	SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
GSIB680	VISHAY	获取价格	Glass Passivated Single-Phase Bridge Rectifier
GSIB680/51	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 2.8A, 800V V(RRM), Silicon, PLASTIC, CASE GSIB-5S, 4 PIN
GSIB680/51-E3	VISHAY	获取价格	DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge
GSIB680/72	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 2.8A, 800V V(RRM), Silicon, PLASTIC, CASE GSIB-5S, 4 PIN
GSIB680/72-E3	VISHAY	获取价格	DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge
GSIB680E3	VISHAY	获取价格	DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-5S, 4 P
GSIB680-E3	VISHAY	获取价格	DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-5S, 4 P
GSIB680-E3/45	VISHAY	获取价格	RECTFR BRIDGE SGL 800V 2.8A 4PIN CASE GSIB-5S - Rail/Tube
GSIB680-E3/51	VISHAY	获取价格	DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge

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