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GSIB640-E3/45 PDF预览

GSIB640-E3/45

更新时间： 2024-09-19 01:22:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 86K
描述
Single-Phase Single In-Line Bridge Rectifiers

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GSIB640-E3/45 数据手册

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GSIB620, GSIB640, GSIB660, GSIB680  
www.vishay.com  
Vishay General Semiconductor  
Single-Phase Single In-Line Bridge Rectifiers  
FEATURES  
• UL recognition file number E54214  
• Thin single in-line package  
• Glass passivated chip junction  
• High surge current capability  
• High case dielectric strength of 1500 VRMS  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
~
~
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Case Style GSIB-5S  
~
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances, office  
equipment, industrial automation applications.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Package  
GSIB-5S  
6.0 A  
Case: GSIB-5S  
IF(AV)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VRRM  
IFSM  
200 V, 400 V, 600 V, 800 V  
180 A  
10 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
IR  
E3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 3.0 V  
TJ max.  
0.95 V  
150 °C  
In-Line  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Diode variations  
MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
GSIB620  
GSIB640  
400  
GSIB660  
600  
GSIB680  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
200  
V
V
V
VRMS  
140  
280  
420  
560  
Maximum DC blocking voltage  
VDC  
200  
400  
600  
800  
TC = 100 °C (1)  
TA = 25 °C (2)  
6.0  
2.8  
Maximum average forward rectified  
output current at  
IF(AV)  
A
Peak forward surge current single sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
180  
120  
A
Rating for fusing (t < 8.3 ms)  
I2t  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Notes  
(1)  
Unit case mounted on aluminum plate heatsink  
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
(2)  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
GSIB620 GSIB640 GSIB660 GSIB680  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
3.0 A  
VF  
0.95  
V
Maximum DC reverse current at  
rated DC blocking voltage per  
diode  
TA = 25 °C  
10  
IR  
μA  
TA = 125 °C  
250  
Revision: 13-Jun-14  
Document Number: 88648  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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GSIB640-E3/45 替代型号

型号 品牌 替代类型 描述 数据表
VSIB640-E3/45 VISHAY

完全替代

 Bridge Rectifier Diode, 6A, 400V V(RRM),
GBJ604 DIODES

功能相似

 6.0A GLASS PASSIVATED BRIDGE RECTIFIER
RBV-604 SANKEN

功能相似

 Bridge Diodes

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GSIB660E3 VISHAY

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