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GSIB620N-M3/45 PDF预览

GSIB620N-M3/45

更新时间： 2024-09-18 14:50:39
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 88K
描述
DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, GSIB-5S, 4 PIN, Bridge Rectifier Diode

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GSIB620N-M3/45 技术参数

生命周期：Active包装说明：R-PSFM-T4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.67其他特性：UL RECOGNIZED
最小击穿电压：200 V配置：BRIDGE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：0.95 VJESD-30 代码：R-PSFM-T4
最大非重复峰值正向电流：180 A元件数量：4
相数：1端子数量：4
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：2.8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED最大重复峰值反向电压：200 V
子类别：Bridge Rectifier Diodes表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

GSIB620N-M3/45 数据手册

 浏览型号GSIB620N-M3/45的Datasheet PDF文件第2页浏览型号GSIB620N-M3/45的Datasheet PDF文件第3页浏览型号GSIB620N-M3/45的Datasheet PDF文件第4页 
GSIB620N, GSIB640N, GSIB660N, GSIB680N  
www.vishay.com  
Vishay General Semiconductor  
Single-Phase Single In-Line Bridge Rectifiers  
FEATURES  
• UL recognition file number E54214  
• Thin single in-Iine package  
• Glass passivated chip junction  
• High surge current capability  
• High case dielectric strength of 1500 VRMS  
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
~
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
~
Case Style GSIB-5S  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances, office  
equipment, industrial automation applications.  
PRIMARY CHARACTERISTICS  
Package  
GSIB-5S  
6.0 A  
MECHANICAL DATA  
IF(AV)  
Case: GSIB-5S  
VRRM  
200 V, 400 V, 600 V, 800 V  
Molding compound meets UL 94 V-0 flammability rating  
IFSM  
180 A  
10 μA  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
IR  
VF  
commercial grade  
0.95 V  
150 °C  
In-Line  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
TJ max.  
Diode variations  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum  
Recommended Torque: 5.7 cm-kg (5 in-lbs)  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GSIB620N  
GSIB640N  
400  
GSIB660N  
600  
GSIB680N  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
V
V
V
280  
420  
560  
Maximum DC blocking voltage  
400  
600  
800  
(1)  
T
C = 100 °C  
IF(AV)  
6.0  
2.8  
Maximum average forward rectified  
output current at  
A
A
(2)  
TA = 25 °C  
IF(AV)  
Peak forward surge current single sine-wave  
IFSM  
180  
120  
superimposed on rated load (JEDEC method)  
Rating for fusing (t < 8.3 ms)  
I2t  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Notes  
(1)  
Unit case mounted on aluminum plate heatsink  
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
(2)  
Revision: 26-Apr-13  
Document Number: 89385  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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