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GSIB620-E3/72 PDF预览

GSIB620-E3/72

更新时间: 2024-11-07 14:50:39
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 100K
描述
DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode

GSIB620-E3/72 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.69其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:180 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2.8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:200 V
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GSIB620-E3/72 数据手册

 浏览型号GSIB620-E3/72的Datasheet PDF文件第2页浏览型号GSIB620-E3/72的Datasheet PDF文件第3页浏览型号GSIB620-E3/72的Datasheet PDF文件第4页 
GSIB620 thru GSIB680  
Vishay General Semiconductor  
Single-Phase Single In-Line Bridge Rectifiers  
FEATURES  
• UL recognition file number E54214  
• Thin single in-line package  
• Glass passivated chip junction  
• High surge current capability  
• High case dielectric strength of 1500 V  
• Solder dip 260 °C, 40 s  
RMS  
~
~
~
~
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Case Style GSIB-5S  
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for switching power supply, home  
appliances, office equipment, industrial automation  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
6.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
IR  
200 V to 800 V  
180 A  
Case: GSIB-5S  
Epoxy meets UL 94 V-0 flammability rating  
10 µA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
VF  
0.95 V  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
TJ max.  
150 °C  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
GSIB620  
GSIB640  
400  
GSIB660  
600  
GSIB680  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
200  
V
V
V
VRMS  
140  
280  
420  
560  
Maximum DC blocking voltage  
VDC  
200  
400  
600  
800  
Maximum average forward rectified  
output current at  
TC = 100 °C  
A = 25 °C  
6.0 (1)  
2.8 (2)  
IF(AV)  
A
T
Peak forward surge current single sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
180  
120  
A
Rating for fusing (t < 8.3 ms)  
I2t  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Notes:  
(1) Unit case mounted on aluminum plate heatsink  
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
Document Number: 88648  
Revision: 15-Dec-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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