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GSIB2580-E3/45 PDF预览

GSIB2580-E3/45

更新时间： 2024-09-18 19:43:43
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 90K
描述
Diode Rectifier Bridge Single 800V 3.5A 4-Pin Case GSIB-5S Tube

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中文翻译

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GSIB2580-E3/45 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：R-PSFM-T4针数：4
Reach Compliance Code：unknownHTS代码：8541.10.00.80
风险等级：5.25其他特性：UL RECOGNIZED
最小击穿电压：800 V外壳连接：ISOLATED
配置：BRIDGE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：BRIDGE RECTIFIER DIODE最大正向电压 (VF)：1 V
JESD-30 代码：R-PSFM-T4JESD-609代码：e3
最大非重复峰值正向电流：350 A元件数量：4
相数：1端子数量：4
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：3.5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：800 V子类别：Bridge Rectifier Diodes
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

GSIB2580-E3/45 数据手册

 浏览型号GSIB2580-E3/45的Datasheet PDF文件第2页浏览型号GSIB2580-E3/45的Datasheet PDF文件第3页浏览型号GSIB2580-E3/45的Datasheet PDF文件第4页 
GSIB2520, GSIB2540, GSIB2560, GSIB2580  
www.vishay.com  
Vishay General Semiconductor  
Single-Phase Single In-Line Bridge Rectifiers  
FEATURES  
• UL recognition file number E54214  
• Thin single in-line package  
• Glass passivated chip junction  
• High surge current capability  
• High case dielectric strength of 2500 VRMS  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
~
~
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Case Style GSIB-5S  
~
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances, office  
equipment, industrial automation applications.  
PRIMARY CHARACTERISTICS  
Package  
GSIB-5S  
25 A  
MECHANICAL DATA  
IF(AV)  
Case: GSIB-5S  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VRRM  
IFSM  
200 V, 400 V, 600 V, 800 V  
350 A  
10 μA  
1.0 V  
IR  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 12.5 V  
TJ max.  
150 °C  
In-Line  
Polarity: As marked on body  
Diode variations  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GSIB2520  
GSIB2540  
400  
GSIB2560  
600  
GSIB2580  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
V
V
V
280  
420  
560  
Maximum DC blocking voltage  
400  
600  
800  
TC = 98 °C (1)  
TA = 25 °C (2)  
25  
Maximum average forward rectified  
output current at  
IF(AV)  
A
3.5  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
350  
500  
A
Rating for fusing (t < 8.3 ms)  
I2t  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Notes  
(1)  
Unit case mounted on aluminum plate heatsink  
Units mounted on PCB without heatsink  
(2)  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL  
GSIB2520  
GSIB2540  
GSIB2560  
GSIB2580  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
12.5 A  
VF  
IR  
1.00  
V
TA = 25 °C  
10  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
μA  
TA = 125 °C  
350  
Revision: 13-Jun-14  
Document Number: 88646  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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