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GSIB2580 PDF预览

GSIB2580

更新时间： 2024-09-17 22:21:51
品牌 Logo 应用领域
威世 - VISHAY 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 60K
描述
Single-Phase Single In-Line Bridge Rectifiers

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中文翻译

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GSIB2580 技术参数

是否Rohs认证：不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.16
Is Samacsys：N配置：BRIDGE, 4 ELEMENTS
二极管类型：BRIDGE RECTIFIER DIODE最大正向电压 (VF)：1 V
最大非重复峰值正向电流：350 A元件数量：4
最高工作温度：150 °C最大输出电流：3.5 A
最大重复峰值反向电压：800 V子类别：Bridge Rectifier Diodes
表面贴装：NOBase Number Matches：1

GSIB2580 数据手册

 浏览型号GSIB2580的Datasheet PDF文件第2页 
GSIB2520 thru GSIB2580  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Single-Phase Single In-Line  
Bridge Rectifiers  
Reverse Voltage 200 to 800V  
Forward Current 25A  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• This series is UL listed under the Recognized  
Component Index, file number E54214.  
Case Style GSIB-5S  
4.6 0.2  
3.6 0.2  
30 0.3  
• High case dielectric strength of 2500 VRMS  
• Ideal for printed circuit boards  
• Glass passivated chip junction  
• High surge current capability  
+
2.5 0.2  
2.2 0.2  
Mechanical Data  
Case: GSIB-5S Molded plastic body  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
High temperature soldering guaranteed:  
260°C/10 seconds, 0.375 (9.5mm) lead length,  
5lbs. (2.3kg) tension  
1 0.1  
0.7 0.1  
7.5  
0.2  
7.5  
0.2  
2.7 0.2  
10 0.2  
Mounting Position: Any (Note 3)  
Mounting Torque: 8 in-lbs max.  
Weight: 0.26 oz., 7.0 g  
Dimensions in millimeters  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol GSIB2520 GSIB2540 GSIB2560 GSIB2580 Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC blocking voltage  
Maximum average forward rectified  
output current at  
TC = 98°C  
TA = 25°C  
25(1)  
IF(AV)  
A
3.5(2)  
Peak forward surge current single sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
I2t  
350  
500  
A
Rating for fusing (t < 8.3ms)  
A2sec  
°C/W  
°C  
R
θJA  
22(2)  
Maximum thermal resistance per leg  
Operating junction and storage temperature range  
R
θJC  
1.0(1)  
TJ, TSTG  
–55 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol GSIB2520 GSIB2540 GSIB2560 GSIB2580 Unit  
Maximum instantaneous forward voltage drop  
per leg at 12.5A  
VF  
IR  
1.00  
V
Maximum DC reverse current at  
rated DC blocking voltage per leg  
TA = 25°C  
TA = 125°C  
10  
350  
µA  
Notes: (1) Unit case mounted on Al plate heatsink  
(2) Units mounted on P.C.B. without heatsink  
(3) Recommended mounting position is to bolt down on heatsink with silicone  
thermal compound for maximum heat transfer with #6 screw  
Document Number 88646  
1-Dec-03  
www.vishay.com  
1
12

中文翻译

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与GSIB2580相关器件

型号 品牌 获取价格 描述 数据表
GSIB2580/51 VISHAY

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 		Bridge Rectifier Diode, 1 Phase, 3.5A, 800V V(RRM), Silicon, PLASTIC, CASE GSIB-5S, 4 PIN
GSIB2580/51-E3 VISHAY

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 		DIODE 3.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge
GSIB2580/72 VISHAY

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 		Bridge Rectifier Diode, 1 Phase, 3.5A, 800V V(RRM), Silicon, PLASTIC, CASE GSIB-5S, 4 PIN
GSIB2580/72-E3 VISHAY

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 		DIODE 3.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge
GSIB2580-E GULFSEMI

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 		SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 600V to 1000V Current: 25.0A
GSIB2580-E3/45 VISHAY

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 		Diode Rectifier Bridge Single 800V 3.5A 4-Pin Case GSIB-5S Tube
GSIB2580-E3/51 VISHAY

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 		DIODE 3.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge
GSIB2580-E3/72 VISHAY

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 		DIODE 3.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge
GSIB2580N VISHAY

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 		Single-Phase Single In-Line Bridge Rectifiers
GSIB2580N-M3/45 VISHAY

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 		DIODE 3.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLAS

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