Datasheet > GSC2D1665

GSC2D1665

更新时间： 2024-04-09 19:00:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	452K
描述
16A,650V,Schottky Barrier Rectifiers

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GSC2D1665 数据手册

SiC Schottky Barrier Diode

GSC2D1665

Features

Key performance parameters



Low conduction loss due to low V_F

Type

V_DC

GSC2D1665

650V

Extremely low switching loss by tiny Q_C

Highly rugged due to better surge current

Industrial standard quality and reliability

I_F@ 156°C

Q_C@400V

T_J

16A

52nC

175°C

Applications



UPS

Power Inverter

High performance SMPS

Power factor correction

Mechanical Data



Case: TO-220AC

Molding compound: UL flammability classification rating

94V-0

TO-220AC



Terminals: Tin-plated; solderability per MIL-STD-202,

Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

GSC2D1665

TO-220AC

50 pcs / Tube

GSC2D1665

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

V_RRM

V_RSM

V_R

I_F

650

Surge Peak Reverse Voltage

DC Peak Reverse Voltage

Continuous Forward Current (T_C= 25°C)

Continuous Forward Current (T_C= 135°C)

I_F

Continuous Forward Current (T_C= 156°C)

I_F

Non-Repetitive Forward Surge Current (10ms single half sine-wave, T_C= 25°C)

Non-Repetitive Forward Surge Current (10ms single half sine-wave, T_C= 110°C)

Repetitive Peak Forward Surge Current (10ms half sine-wave, T_C= 25°C)

Repetitive Peak Forward Surge Current (10ms half sine-wave, T_C= 110°C)

i²dt value (10ms single half sine-wave, T_C= 25°C)

i²dt value (10ms single half sine-wave, T_C= 110°C)

128

I_FSM

I_FRM

∫i²dt

A²s

SKM0222A: June 2022

www.gmesemi.com

12 3 4

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