Datasheet > GSC2D1065BN

GSC2D1065BN

更新时间： 2024-04-09 19:02:19

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	382K
描述
10A,650V,Schottky Barrier Rectifiers

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GSC2D1065BN 数据手册

SiC Schottky Barrier Diode

GSC2D1065BN

Features

Key performance parameters



Low conduction loss due to low V_F

Type

V_DC

GSC2D1065BN

650V

Extremely low switching loss by tiny Q_C

Highly rugged due to better surge current

Industrial standard quality and reliability

I_F@ 158°C

Q_C@400V

T_J

10A

27nC

175°C

Applications



UPS

Power Inverter

High performance SMPS

Power factor correction

Mechanical Data



Case: TO-263

Molding compound: UL flammability classification rating

94V-0



Terminals: Tin-plated; solderability per MIL-STD-202,

Method 208

TO-263

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

50 pcs / Tube or 800 pcs / Tape & Reel

Marking Code

GSC2D1065BN

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

V_RRM

V_RSM

V_R

I_F

650

Surge Peak Reverse Voltage

DC Peak Reverse Voltage

Continuous Forward Current (T_C= 25°C)

Continuous Forward Current (T_C= 135°C)

I_F

Continuous Forward Current (T_C= 158°C)

I_F

Non-Repetitive Forward Surge Current (10ms single half sine-wave, T_C= 25°C)

Non-Repetitive Forward Surge Current (10ms single half sine-wave, T_C= 110°C)

Repetitive Peak Forward Surge Current (10ms half sine-wave, T_C= 25°C)

Repetitive Peak Forward Surge Current (10ms half sine-wave, T_C= 110°C)

i²dt value (10ms single half sine-wave, T_C= 25°C)

i²dt value (10ms single half sine-wave, T_C= 110°C)

I_FSM

I_FRM

∫i²dt

31.7

24.3

A²s

SKM0292A: April 2023 [P]

www.gmesemi.com

12 3 4

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