Datasheet > GS88118AGD-150I

GS88118AGD-150I

更新时间： 2024-11-27 10:15:27

品牌	Logo	应用领域
GSI		静态存储器
页数	文件大小	规格书
36页	915K
描述
Cache SRAM, 512KX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165

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GS88118AGD-150I 数据手册

GS88118A(T/D)/GS88132A(D)/GS88136A(T/D)

250 MHz–133 MHz

100-Pin TQFP & 165-Bump BGA

Commercial Temp

512K x 18, 256K x 36

2.5 V or 3.3 V V

9Mb Synchronous Burst SRAMs

Industrial Temp

2.5 V or 3.3 V I/O

Flow Through/Pipeline Reads

Features

The function of the Data Output register can be controlled by

the user via the FT mode pin (Pin 14). Holding the FT mode

pin low places the RAM in Flow Through mode, causing

output data to bypass the Data Output Register. Holding FT

high places the RAM in Pipeline mode, activating the rising-

edge-triggered Data Output Register.

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

SCD Pipelined Reads

• Automatic power-down for portable applications

• JEDEC-standard packages

The GS88118/36AT/D is a SCD (Single Cycle Deselect)

pipelined synchronous SRAM. DCD (Dual Cycle Deselect)

versions are also available. SCD SRAMs pipeline deselect

commands one stage less than read commands. SCD RAMs

begin turning off their outputs immediately after the deselect

command has been captured in the input registers.

Functional Description

Applications

The GS88118/36AT/D is a 9,437,184-bit high performance

synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache

applications supporting high performance CPUs, the device

now finds application in synchronous SRAM applications,

ranging from DSP main store to networking chip set support.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Controls

Sleep Mode

Addresses, data I/Os, chip enable (E1, E2), address burst

control inputs (ADSP, ADSC, ADV) and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

cycles can be initiated with either ADSP or ADSC inputs. In

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Core and Interface Voltages

The GS88118/36AT/D operates on a 2.5 V or 3.3 V power

supply. All input are 3.3 V and 2.5 V compatible. Separate

output power (V

) pins are used to decouple output noise

DDQ

from the internal circuits and are 3.3 V and 2.5 V compatible.

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

Pipeline

3-1-1-1

2.5 2.7 3.0 3.4 3.8 4.0 ns

4.0 4.4 5.0 6.0 6.7 7.5 ns

tCycle

Curr (x18) 280 255 230 200 185 165 mA

Curr (x36) 330 300 270 230 215 190 mA

Flow

Through

2-1-1-1

5.5 6.0 6.5 7.0 7.5 8.5 ns

tCycle

Curr (x18) 175 165 160 150 145 135 mA

Curr (x36) 200 190 180 170 165 150 mA

Rev: 1.04 3/2005

1/36

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...36

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与GS88118AGD-150I相关器件

型号	品牌	获取价格	描述	数据表
GS88118AGD-166IT	GSI	获取价格	Cache SRAM, 512KX18, 7ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
GS88118AGD-200IT	GSI	获取价格	Cache SRAM, 512KX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
GS88118AGD-200T	GSI	获取价格	Cache SRAM, 512KX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
GS88118AGD-225	GSI	获取价格	Cache SRAM, 512KX18, 6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
GS88118AGD-225T	GSI	获取价格	Cache SRAM, 512KX18, 6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
GS88118AGD-250	GSI	获取价格	Cache SRAM, 512KX18, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
GS88118AGT-133	GSI	获取价格	Cache SRAM, 512KX18, 8.5ns, CMOS, PQFP100, TQFP-100
GS88118AGT-133IT	GSI	获取价格	Cache SRAM, 512KX18, 8.5ns, CMOS, PQFP100, TQFP-100
GS88118AGT-150I	GSI	获取价格	Cache SRAM, 512KX18, 7.5ns, CMOS, PQFP100, TQFP-100
GS88118AGT-150IT	GSI	获取价格	Cache SRAM, 512KX18, 7.5ns, CMOS, PQFP100, TQFP-100

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