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GS880E18T-100 PDF预览

GS880E18T-100

更新时间： 2024-11-11 04:15:51
品牌 Logo 应用领域
GSI 存储内存集成电路静态存储器
页数 文件大小 规格书
25页 851K
描述
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs

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GS880E18T-100 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：QFP
包装说明：LQFP, QFP100,.63X.87针数：100
Reach Compliance Code：compliantECCN代码：3A991.B.2.B
HTS代码：8542.32.00.41风险等级：5.78
Is Samacsys：N最长访问时间：12 ns
其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTUREI/O 类型：COMMON
JESD-30 代码：R-PQFP-G100JESD-609代码：e0
长度：20 mm内存密度：9437184 bit
内存集成电路类型：CACHE SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端子数量：100字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：512KX18输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装等效代码：QFP100,.63X.87封装形状：RECTANGULAR
封装形式：FLATPACK, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：2.5/3.3,3.3 V
认证状态：Not Qualified座面最大高度：1.6 mm
最大待机电流：0.03 A最小待机电流：3.14 V
子类别：SRAMs最大压摆率：0.225 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3.135 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.65 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：14 mm
Base Number Matches：1

GS880E18T-100 数据手册

 浏览型号GS880E18T-100的Datasheet PDF文件第2页浏览型号GS880E18T-100的Datasheet PDF文件第3页浏览型号GS880E18T-100的Datasheet PDF文件第4页浏览型号GS880E18T-100的Datasheet PDF文件第5页浏览型号GS880E18T-100的Datasheet PDF文件第6页浏览型号GS880E18T-100的Datasheet PDF文件第7页 
Preliminary  
GS880E18/32/36T-11/11.5/100/80/66  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
100 MHz–66 MHz  
512K x 18, 256K x 32, 256K x 36  
8Mb Sync Burst SRAMs  
3.3 V V  
DD  
3.3 V and 2.5 V I/O  
interleave order with the Linear Burst Order (LBO) input. The  
Burst function need not be used. New addresses can be loaded  
on every cycle with no degradation of chip performance.  
Features  
• FT pin for user-configurable flow through or pipelined  
operation  
• Dual Cycle Deselect (DCD) operation  
• 3.3 V +10%/–5% core power supply  
• 2.5 V or 3.3 V I/O supply  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to Interleaved Pipeline mode  
• Byte Write (BW) and/or Global Write (GW) operation  
• Common data inputs and data outputs  
• Clock Control, registered, address, data, and control  
• Internal self-timed write cycle  
Flow Through / Pipeline Reads  
The function of the Data Output register can be controlled by  
the user via the FT mode pin (Pin 14). Holding the FT mode  
pin low places the RAM in Flow Through mode, causing  
output data to bypass the Data Output Register. Holding FT  
high places the RAM in Pipeline mode, activating the rising-  
edge-triggered Data Output Register.  
DCD Pipelined Reads  
The GS880E18/32/36T is a DCD (Dual Cycle Deselect)  
pipelined synchronous SRAM. SCD (Single Cycle Deselect)  
versions are also available. DCD SRAMs pipeline disable  
commands to the same degree as read commands. DCD RAMs  
hold the deselect command for one full cycle and then begin  
turning off their outputs just after the second rising edge of  
clock.  
• Automatic power-down for portable applications  
• 100-lead TQFP package  
-11  
-11.5  
10 ns  
-100  
-80  
-66  
Pipeline tCycle 10 ns  
10 ns 12.5 ns 15 ns  
3-1-1-1  
tKQ  
IDD  
4.0 ns 4.0 ns 4.0 ns 4.5 ns 5.0 ns  
225 mA 225 mA 225 mA 200 mA 185 mA  
Byte Write and Global Write  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the byte write  
control inputs.  
Flow  
Through  
2-1-1-1  
tKQ  
tCycle  
IDD  
11 ns 11.5 ns 12 ns  
15 ns 15 ns 15 ns  
180 mA 180 mA 180 mA 175 mA 165 mA  
14 ns  
15 ns  
18 ns  
20 ns  
Sleep Mode  
Functional Description  
Low power (Sleep mode) is attained through the assertion  
(high) of the ZZ signal, or by stopping the clock (CK).  
Memory data is retained during Sleep mode.  
Applications  
The GS880E18/32/36T is a 9,437,184-bit (8,388,608-bit for  
x32 version) high performance synchronous SRAM with a 2-  
bit burst address counter. Although of a type originally  
developed for Level 2 Cache applications supporting high  
performance CPUs, the device now finds application in  
synchronous SRAM applications, ranging from DSP main  
store to networking chip set support.  
Core and Interface Voltages  
The GS880E18/32/36T operates on a 3.3 V power supply, and  
all inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate  
output power (VDDQ) pins are used to decouple output noise  
from the internal circuit.  
Controls  
Addresses, data I/Os, chip enables (E1, E2, E3), address burst  
control inputs (ADSP, ADSC, ADV) and write control inputs  
(Bx, BW, GW) are synchronous and are controlled by a  
positive-edge-triggered clock input (CK). Output enable (G)  
and power down control (ZZ) are asynchronous inputs. Burst  
cycles can be initiated with either ADSP or ADSC inputs. In  
Burst mode, subsequent burst addresses are generated  
internally and are controlled by ADV. The burst address  
counter may be configured to count in either linear or  
Rev: 1.11 11/2000  
1/25  
© 2000, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
1234567...25

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 		512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs

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