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GS8672T37AE-300T PDF预览

GS8672T37AE-300T

更新时间: 2024-11-27 09:30:35
品牌 Logo 应用领域
GSI 双倍数据速率静态存储器
页数 文件大小 规格书
28页 967K
描述
DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165

GS8672T37AE-300T 数据手册

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Preliminary  
GS8672T19/37AE-400/375/333/300  
72Mb SigmaDDR-II+TM  
Burst of 2 ECCRAMTM  
400 MHz–300 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
1.8 V V  
DD  
1.8 V and 1.5 V I/O  
Features  
Clocking and Addressing Schemes  
• On-Chip ECC with virtually zero SER  
• 2.0 Clock Latency  
• Simultaneous Read and Write SigmaDDR™ Interface  
• Common I/O bus  
• JEDEC-standard pinout and package  
• Double Data Rate interface  
The GS8672T19/37AE SigmaDDR-II+ ECCRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer.  
• Byte Write Capability  
• Burst of 2 Read and Write  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
• Pipelined read operation with self-timed Late Write  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• Pin-compatible with present 9Mb, 18Mb, 36Mb and future  
144Mb devices  
Common I/O x36 and x18 SigmaDDR-II+ B2 RAMs always  
transfer data in two packets. When a new address is loaded, A0  
presets an internal 1 bit address counter. The counter  
increments by 1 (toggles) for each beat of a burst of two data  
transfer. Because the LSB is tied off internally, the address  
field of a SigmaDDR-II+ B2 RAM is always one address pin  
less than the advertised index depth (e.g., the 4M x 18 has a  
2M addressable index).  
On-Chip Error Correction Code  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
GSI's ECCRAMs implement an ECC algorithm that detects  
and corrects all single-bit memory errors, including those  
induced by Soft Error Rate (SER) events such as cosmic rays,  
alpha particles etc. The resulting SER of these devices is  
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude  
improvement over comparable SRAMs with no On-Chip ECC,  
which typically have an SER of 200 FITs/Mb or more. SER  
quoted above is based on reading taken at sea level.  
SigmaDDRECCRAM Overview  
The GS8672T19/37AE ECCRAMs are built in compliance  
with the SigmaDDR-II+ SRAM pinout standard for Common  
I/O synchronous ECCRAMs. They are 75,497,472-bit (72Mb)  
ECCRAMs. The GS8672T19/37AE SigmaCIO ECCRAMs are  
just one element in a family of low power, low voltage HSTL  
I/O ECCRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
However, the On-Chip Error Correction (ECC) will be  
disabled if a “Half Write” operation is initiated. See the Byte  
Write Contol section for further information.  
Parameter Synopsis  
-400  
2.5 ns  
0.45 ns  
-375  
-333  
3.0 ns  
0.45 ns  
-300  
3.3 ns  
0.45 ns  
tKHKH  
tKHQV  
2.66 ns  
0.45 ns  
Rev: 1.00 5/2010  
1/28  
© 2010, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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