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GS8662TT38CGD-633 PDF预览

GS8662TT38CGD-633

更新时间: 2023-12-06 20:13:34
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GSI /
页数 文件大小 规格书
24页 711K
描述
165 BGA

GS8662TT38CGD-633 数据手册

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GS8662TT20/38CGD-633/550/500  
633 MHz–500 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
TM  
72Mb SigmaDDR-II+  
Burst of 2 SRAM  
1.8 V V  
DD  
1.8 V or 1.5 V I/O  
Features  
Clocking and Addressing Schemes  
• 2.5 Clock Latency  
The GS8662TT20/38CGD SigmaDDR-II+ SRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer.  
• Simultaneous Read and Write SigmaDDRTM Interface  
• JEDEC-standard pinout and package  
• Double Data Rate interface  
• Byte Write controls sampled at data-in time  
• Burst of 2 Read and Write  
Each internal read and write operation in a SigmaDDR-II+ B2  
RAM is two times wider than the device I/O bus. An input data  
bus de-multiplexer is used to accumulate incoming data before  
it is simultaneously written to the memory array. An output  
data multiplexer is used to capture the data produced from a  
single memory array read and then route it to the appropriate  
output drivers as needed. Therefore, the address field of a  
SigmaDDR-II+ B2 RAM is always one address pin less than  
the advertised index depth (e.g., the 4M x 18 has a 2M  
addressable index).  
• Dual-Range On-Die Termination (ODT) on Data (D), Byte  
Write (BW), and Clock (K, K) inputs  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• Data Valid Pin (QVLD) Support  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• RoHS-compliant 165-bump BGA package  
SigmaDDR-IIFamily Overview  
The GS8662TT20/38CGD are built in compliance with the  
SigmaDDR-II+ SRAM pinout standard for Common I/O  
synchronous SRAMs. They are 75,497,472-bit (72Mb)  
SRAMs. The GS8662TT20/38CGD SigmaDDR-II+ SRAMs  
are just one element in a family of low power, low voltage  
HSTL I/O SRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
Parameter Synopsis  
-633  
-550  
-500  
2.0 ns  
0.45 ns  
tKHKH  
tKHQV  
1.58 ns  
0.45 ns  
1.81 ns  
0.45 ns  
Rev: 1.01 9/2019  
1/24  
© 2019, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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