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GS8662Q08E-200IT PDF预览

GS8662Q08E-200IT

更新时间: 2024-11-12 13:08:07
品牌 Logo 应用领域
GSI 静态存储器
页数 文件大小 规格书
35页 1578K
描述
Standard SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165

GS8662Q08E-200IT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:15 X 17 MM, 1 MM PITCH, FPBGA-165针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.79
最长访问时间:0.45 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PBGA-B165长度:17 mm
内存密度:67108864 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:165
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX8
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.5 mm
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15 mmBase Number Matches:1

GS8662Q08E-200IT 数据手册

 浏览型号GS8662Q08E-200IT的Datasheet PDF文件第2页浏览型号GS8662Q08E-200IT的Datasheet PDF文件第3页浏览型号GS8662Q08E-200IT的Datasheet PDF文件第4页浏览型号GS8662Q08E-200IT的Datasheet PDF文件第5页浏览型号GS8662Q08E-200IT的Datasheet PDF文件第6页浏览型号GS8662Q08E-200IT的Datasheet PDF文件第7页 
Preliminary  
GS8662Q08/09/18/36E-300/250/200/167  
300 MHz–167 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
72Mb SigmaQuad-II  
Burst of 2 SRAM  
1.8 V V  
DD  
1.8 V and 1.5 V I/O  
Features  
• Simultaneous Read and Write SigmaQuad™ Interface  
• JEDEC-standard pinout and package  
• Dual Double Data Rate interface  
• Byte Write controls sampled at data-in time  
• Burst of 2 Read and Write  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• Pin-compatible with present 9Mb, 18Mb, and 36Mb and  
future 144Mb devices  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
Bottom View  
165-Bump, 15 mm x 17 mm BGA  
1 mm Bump Pitch, 11 x 15 Bump Array  
SigmaQuadFamily Overview  
The GSQ8662Q08/09/18/36E are built in compliance with  
the SigmaQuad-II SRAM pinout standard for Separate I/O  
synchronous SRAMs. They are 75,497,472-bit (72Mb)  
SRAMs. The GSQ8662Q08/09/18/36E SigmaQuad SRAMs  
are just one element in a family of low power, low voltage  
HSTL I/O SRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
C clock inputs. C and C are also independent single-ended  
clock inputs, not differential inputs. If the C clocks are tied  
high, the K clocks are routed internally to fire the output  
registers instead.  
Because Separate I/O SigmaQuad-II B2 RAMs always transfer  
data in two packets, A0 is internally set to 0 for the first read or  
write transfer, and automatically incremented by 1 for the next  
transfer. Because the LSB is tied off internally, the address  
field of a SigmaQuad-II B2 RAM is always one address pin  
less than the advertised index depth (e.g., the 4M x 18 has a  
2048K addressable index).  
Clocking and Addressing Schemes  
The GSQ8662Q08/09/18/36E SigmaQuad-II SRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer. The device also allows the user to manipulate the  
output register clock inputs quasi independently with the C and  
Parameter Synopsis  
-300  
3.3 ns  
0.45 ns  
-250  
4.0 ns  
0.45 ns  
-200  
5.0 ns  
0.45 ns  
-167  
tKHKH  
tKHQV  
6.0 ns  
0.5 ns  
Rev: 1.01 9/2005  
1/35  
© 2005, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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