Datasheet > GS8640Z18RT-250M

GS8640Z18RT-250M

更新时间： 2024-09-26 14:52:51

品牌	Logo	应用领域
GSI		/
页数	文件大小	规格书
25页	488K
描述
100 TQFP

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技术参数
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GS8640Z18RT-250M 技术参数

生命周期：	Active	包装说明：	LQFP, QFP100,.63X.87
Reach Compliance Code：	compliant	风险等级：	5.73
最长访问时间：	5.5 ns	其他特性：	IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE
最大时钟频率 (fCLK)：	250 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PQFP-G100	长度：	20 mm
内存密度：	75497472 bit	内存集成电路类型：	ZBT SRAM
内存宽度：	18	功能数量：	1
端子数量：	100	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	4MX18	可输出：	YES
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装等效代码：	QFP100,.63X.87	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
座面最大高度：	1.6 mm	最大待机电流：	0.12 A
最大压摆率：	0.45 mA	最大供电电压 (Vsup)：	2.7 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	MILITARY	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
总剂量：	50k Rad(Si) V	宽度：	14 mm
Base Number Matches：	1

GS8640Z18RT-250M 数据手册

GS81280Z18/36RT-333M/250M

GS8640Z18/36RT-333M/250M

GS8320Z18/36RT-333M/250M

333 MHz–250 MHz

Rad-Tolerant SRAM

144Mb/72Mb/36Mb PL/FT No Bus Turnaround SRAMs

100-Pin TQFP

Military Temp

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

SRAMs, allow utilization of all available bus bandwidth by

eliminating the need to insert deselect cycles when the device

is switched from read to write cycles.

Features

• Aerospace-Level Product

• NBT (No Bus Turn Around) functionality allows zero wait

read-write-read bus utilization; Fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• User-configurable Pipeline and Flow Through mode

• LBO pin for Linear or Interleave Burst mode

• Pin compatible with 4Mb, 9Mb, 18Mb, 36Mb, and 72Mb

devices

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

The GS81280Z18/36RT, GS8640Z18/36RT, and

GS8320Z18/36RT may be configured by the user to operate in

Pipeline or Flow Through mode. Operating as a pipelined

synchronous device, meaning that in addition to the rising edge

triggered registers that capture input signals, the device

incorporates a rising-edge-triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

• 100-pin TQFP package

Radiation Performance

• Total Ionizing Dose (TID) > 50krads(Si)

• Destructive Single Event Latchup Immunity >37 MeV.cm²/mg

(100C)

Functional Description

The GS81280Z18/36RT, GS8640Z18/36RT, and

GS8320Z18/36RT are Synchronous Static SRAMs. GSI's NBT

SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/

double late write or flow through read/single late write

The GS81280Z18/36RT, GS8640Z18/36RT, and

GS8320Z18/36RT are implemented with GSI's high

performance CMOS technology and are available in a JEDEC-

standard 100-pin TQFP package.

Parameter Synopsis

-333M -250M

Unit

t_KQ

2.5

3.0

2.5

4.0

tCycle

Pipeline

3-1-1-1

Curr (x18)

Curr (x32/x36)

530

600

430

470

t_KQ

tCycle

4.5

5.5

Flow Through

2-1-1-1

Curr (x18)

Curr (x32/x36)

400

435

360

380

Rev: 1.01a 10/2020

1/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...25

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与GS8640Z18RT-250M相关器件

型号	品牌	获取价格	描述	数据表
GS8640Z18RT-333M	GSI	获取价格	100 TQFP
GS8640Z18T	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-167	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-167I	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-167IT	GSI	获取价格	ZBT SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100
GS8640Z18T-167IV	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-167IVT	GSI	获取价格	ZBT SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100
GS8640Z18T-167T	GSI	获取价格	ZBT SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100
GS8640Z18T-167V	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-167VT	GSI	获取价格	ZBT SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100

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