Datasheet > GS864018RT-250M

GS864018RT-250M

更新时间： 2024-11-12 14:55:47

品牌	Logo	应用领域
GSI		/
页数	文件大小	规格书
25页	433K
描述
100 TQFP

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

GS864018RT-250M 技术参数

生命周期：	Active	包装说明：	QFP-100
Reach Compliance Code：	compliant	风险等级：	5.71
最长访问时间：	5.5 ns	其他特性：	IT ALSO OPERATES AT 2.5 V NOMINAL SUPPLY VOLTAGE
JESD-30 代码：	R-PQFP-G100	长度：	20 mm
内存集成电路类型：	CACHE SRAM	功能数量：	1
端子数量：	100	工作模式：	SYNCHRONOUS
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	座面最大高度：	1.6 mm
表面贴装：	YES	技术：	CMOS
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	总剂量：	50k Rad(Si) V
宽度：	14 mm	Base Number Matches：	1

GS864018RT-250M 数据手册

GS8128018/36RT-333M/250M

GS864018/36RT-333M/250M

GS832018/36RT-333M/250M

333 MHz–250 MHz

Rad-Tolerant SRAM

144Mb/72Mb/36Mb PL/FT Synchronous Burst SRAMs

100-Pin TQFP

Military Temp

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

cycles can be initiated with either ADSP or ADSC inputs. In

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

Features

• Aerospace-Level Product

• FT pin for user-configurable flow through or pipeline

operation

• Single Cycle Deselect (SCD) operation

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by

the user via the FT mode pin (Pin 14). Holding the FT mode

pin low places the RAM in Flow Through mode, causing

output data to bypass the Data Output Register. Holding FT

high places the RAM in Pipeline mode, activating the rising-

edge-triggered Data Output Register.

• Automatic power-down for portable applications

• 100-pin TQFP package

Radiation Performance

• Total Ionizing Dose (TID) > 50krads(Si)

• Destructive Single Event Latchup Immunity >37 MeV.cm²/mg

(100C)

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Functional Description

Applications

Sleep Mode

The GS8128018/36RT, GS864018/36RT, and

GS832018/36RT are high performance synchronous SRAMs

with a 2-bit burst address counter. Although of a type

originally developed for Level 2 Cache applications supporting

high performance CPUs, these devices now find application in

synchronous SRAM applications, ranging from DSP main

store to networking chip set support.

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Core and Interface Voltages

The GS8128018/36RT, GS864018/36RT, and

GS832018/36RT operate on a 2.5 V or 3.3 V power supply. All

inputs are 3.3 V and 2.5 V compatible. Separate output power

Controls

) pins are used to decouple output noise from the

Addresses, data I/Os, chip enables (E1 and E3), address burst

control inputs (ADSP, ADSC, ADV), and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

DDQ

internal circuits and are 3.3 V and 2.5 V compatible.

Parameter Synopsis

-333M -250M

Unit

t_KQ

2.5

3.0

2.5

4.0

tCycle

Pipeline

3-1-1-1

Curr (x18)

Curr (x36)

530

600

430

470

t_KQ

tCycle

4.5

5.5

Flow Through

2-1-1-1

Curr (x18)

Curr (x36)

400

435

360

380

Rev: 1.01a 10/2020

1/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...25

中文翻译

下载PDF

与GS864018RT-250M相关器件

型号	品牌	获取价格	描述	数据表
GS864018RT-333M	GSI	获取价格	100 TQFP
GS864018T	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T-167	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T-167I	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T-167IT	GSI	获取价格	Cache SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100
GS864018T-167IV	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T-167T	GSI	获取价格	暂无描述
GS864018T-167V	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T-167VT	GSI	获取价格	Cache SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100
GS864018T-200	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs

与GS864018RT-250M相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

GS864018RT-250M

GS864018RT-250M 技术参数

GS864018RT-250M 数据手册

与GS864018RT-250M相关器件

与GS864018RT-250M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GS864018RT-250M

GS864018RT-250M 技术参数

GS864018RT-250M 数据手册

与GS864018RT-250M相关器件

与GS864018RT-250M相关文章

您还可以找

您在本页遇到什么问题？