Datasheet > 存储 > SRAM> GS8342T36E-250T

GS8342T36E-250T

更新时间： 2024-02-08 21:25:53

品牌	Logo	应用领域
GSI		静态存储器双倍数据速率
页数	文件大小	规格书
37页	1722K
描述
Standard SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165

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GS8342T36E-250T 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LBGA,	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.77
Is Samacsys：	N	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	JESD-30 代码：	R-PBGA-B165
长度：	17 mm	内存密度：	37748736 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	36
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	1048576 words
字数代码：	1000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	1MX36	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	15 mm
Base Number Matches：	1

GS8342T36E-250T 数据手册

Preliminary

GS8342T08/09/18/36E-333/300/267*/250/200/167

167 MHz–333 MHz

165-Bump BGA

Commercial Temp

Industrial Temp

36Mb SigmaCIO DDR-II

Burst of 2 SRAM

1.8 V V

1.8 V and 1.5 V I/O

Features

• Simultaneous Read and Write SigmaCIO™ Interface

• Common I/O bus

• JEDEC-standard pinout and package

• Double Data Rate interface

• Byte Write (x36 and x18) and Nybble Write (x8) function

• Burst of 2 Read and Write

• 1.8 V +100/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

• Pipelined read operation with self-timed Late Write

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

• Pin-compatible with present 9Mb and 18Mb and future 72Mb

and 144Mb devices

Bottom View

165-Bump, 15 mm x 17 mm BGA

1 mm Bump Pitch, 11 x 15 Bump Array

SigmaCIO™ Family Overview

clock inputs, not differential inputs. If the C clocks are tied

high, the K clocks are routed internally to fire the output

registers instead.

The GS8342T08/09/18/36E are built in compliance with the

SigmaCIO DDR-II SRAM pinout standard for Common I/O

synchronous SRAMs. They are 37,748,736-bit (36Mb)

SRAMs. The GS8342T08/09/18/36E SigmaCIO SRAMs are

just one element in a family of low power, low voltage HSTL

I/O SRAMs designed to operate at the speeds needed to

implement economical high performance networking systems.

Common I/O x36 and x18 SigmaCIO DDR-II B2 RAMs

always transfer data in two packets. When a new address is

loaded, A0 presets an internal 1 bit address counter. The

counter increments by 1 (toggles) for each beat of a burst of

two data transfer.

Clocking and Addressing Schemes

Common I/O x8 SigmaCIO DDR-II B2 RAMs always transfer

data in two packets. When a new address is loaded, the LSB

is internally set to 0 for the first read or write transfer, and

incremented by 1 for the next transfer. Because the LSB is

tied off internally, the address field of a x8 SigmaCIO DDR-II

B4 RAM is always one address pin less than the advertised

index depth (e.g., the 8M x 8 has a 2M addressable index).

The GS8342T08/09/18/36E SigmaCIO DDR-II SRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

inputs, not differential inputs to a single differential clock input

buffer. The device also allows the user to manipulate the

output register clock inputs quasi independently with the C and

C clock inputs. C and C are also independent single-ended

Parameter Synopsis

-333

-300

-267*

-250

-200

-167

tKHKH

tKHQV

3.0 ns

3.3 ns

3.75 ns

4.0 ns

5.0 ns

6.0 ns

0.5 ns

0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns

* The 267 MHz speed bin is only available on the x18 part.

Rev: 1.02 8/2005

1/37

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...37

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与GS8342T36E-250T相关器件

型号	品牌	描述	获取价格	数据表
GS8342T36E-300	GSI	36Mb SigmaCIO DDR-II Burst of 2 SRAM	获取价格
GS8342T36E-300I	GSI	36Mb SigmaCIO DDR-II Burst of 2 SRAM	获取价格
GS8342T36E-333	GSI	36Mb SigmaCIO DDR-II Burst of 2 SRAM	获取价格
GS8342T36E-333I	GSI	36Mb SigmaCIO DDR-II Burst of 2 SRAM	获取价格
GS8342T36GE-167	GSI	36Mb SigmaCIO DDR-II Burst of 2 SRAM	获取价格
GS8342T36GE-167I	GSI	36Mb SigmaCIO DDR-II Burst of 2 SRAM	获取价格

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