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GS8321Z18AD-400I PDF预览

GS8321Z18AD-400I

更新时间: 2024-11-06 14:57:07
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GSI /
页数 文件大小 规格书
34页 500K
描述
165 BGA

GS8321Z18AD-400I 数据手册

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GS8321Z18/32/36AD-400/375/333/250/200/150  
400 MHz–150 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
36Mb Pipelined and Flow Through  
Synchronous NBT SRAM  
2.5 V, or 3.3 V V  
DD  
2.5 V, or 3.3 V I/O  
Because it is a synchronous device, address, data inputs, and  
read/ write control inputs are captured on the rising edge of the  
input clock. Burst order control (LBO) must be tied to a power  
rail for proper operation. Asynchronous inputs include the  
Sleep mode enable, ZZ and Output Enable. Output Enable can  
be used to override the synchronous control of the output  
drivers and turn the RAM's output drivers off at any time.  
Write cycles are internally self-timed and initiated by the rising  
edge of the clock input. This feature eliminates complex off-  
chip write pulse generation required by asynchronous SRAMs  
and simplifies input signal timing.  
Features  
• User-configurable Pipeline and Flow Through mode  
• NBT (No Bus Turn Around) functionality allows zero wait  
read-write-read bus utilization  
• Fully pin-compatible with both pipelined and flow through  
NtRAM™, NoBL™ and ZBT™ SRAMs  
• IEEE 1149.1 JTAG-compatible Boundary Scan  
• 2.5 V, or 3.3 V +10%/–10% core power supply  
• LBO pin for Linear or Interleave Burst mode  
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 18Mb devices  
• Byte write operation (9-bit Bytes)  
• 3 chip enable signals for easy depth expansion  
• ZZ pin for automatic power-down  
• JEDEC-standard 165-bump BGA package  
• RoHS-compliant 165-bump BGA package available  
The GS8321Z18/32/36AD may be configured by the user to  
operate in Pipeline or Flow Through mode. Operating as a  
pipelined synchronous device, in addition to the rising-edge-  
triggered registers that capture input signals, the device  
incorporates a rising-edge-triggered output register. For read  
cycles, pipelined SRAM output data is temporarily stored by  
the edge triggered output register during the access cycle and  
then released to the output drivers at the next rising edge of  
clock.  
Functional Description  
The GS8321Z18/32/36AD is a 36Mbit Synchronous Static  
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or  
other pipelined read/double late write or flow through read/  
single late write SRAMs, allow utilization of all available bus  
bandwidth by eliminating the need to insert deselect cycles  
when the device is switched from read to write cycles.  
The GS8321Z18/32/36AD is implemented with GSI's high  
performance CMOS technology and is available in JEDEC-  
standard 165-bump BGA package.  
Parameter Synopsis  
-400  
-375  
-333  
-250  
-200  
-150  
Unit  
t
2.5  
2.5  
2.5  
2.66  
2.5  
3.3  
2.5  
4.0  
3.0  
5.0  
3.8  
6.7  
ns  
ns  
KQ  
Pipeline  
3-1-1-1  
tCycle  
Curr (x18)  
Curr (x32/x36)  
395  
475  
390  
455  
355  
415  
280  
335  
240  
280  
205  
230  
mA  
mA  
t
4.0  
4.0  
4.2  
4.2  
4.5  
4.5  
5.5  
5.5  
6.5  
6.5  
7.5  
7.5  
ns  
ns  
KQ  
Flow  
Through  
2-1-1-1  
tCycle  
Curr (x18)  
Curr (x32/x36)  
290  
335  
275  
320  
260  
305  
235  
270  
200  
240  
190  
220  
mA  
mA  
Rev: 1.03 8/2013  
1/34  
© 2011, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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