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GS832018T-166 PDF预览

GS832018T-166

更新时间： 2024-11-23 07:02:07
品牌 Logo 应用领域
GSI 存储静态存储器
页数 文件大小 规格书
25页 645K
描述
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

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GS832018T-166 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：QFP包装说明：LQFP, QFP100,.63X.87
针数：100Reach Compliance Code：compliant
ECCN代码：3A991.B.2.BHTS代码：8542.32.00.41
风险等级：5.85最长访问时间：8 ns
其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY最大时钟频率 (fCLK)：166 MHz
I/O 类型：COMMONJESD-30 代码：R-PQFP-G100
长度：20 mm内存密度：37748736 bit
内存集成电路类型：CACHE SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端子数量：100字数：2097152 words
字数代码：2000000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：2MX18输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装等效代码：QFP100,.63X.87封装形状：RECTANGULAR
封装形式：FLATPACK, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：2.5/3.3 V
认证状态：Not Qualified座面最大高度：1.6 mm
最大待机电流：0.06 A最小待机电流：3.14 V
子类别：SRAMs最大压摆率：0.2 mA
最大供电电压 (Vsup)：2.7 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mm

GS832018T-166 数据手册

 浏览型号GS832018T-166的Datasheet PDF文件第2页浏览型号GS832018T-166的Datasheet PDF文件第3页浏览型号GS832018T-166的Datasheet PDF文件第4页浏览型号GS832018T-166的Datasheet PDF文件第5页浏览型号GS832018T-166的Datasheet PDF文件第6页浏览型号GS832018T-166的Datasheet PDF文件第7页 
Preliminary  
GS832018/32/36T-250/225/200/166/150/133  
250 MHz–133 MHz  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
2M x 18, 1M x 32, 1M x 36  
36Mb Sync Burst SRAMs  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
cycles can be initiated with either ADSP or ADSC inputs. In  
Burst mode, subsequent burst addresses are generated  
internally and are controlled by ADV. The burst address  
counter may be configured to count in either linear or  
interleave order with the Linear Burst Order (LBO) input. The  
Burst function need not be used. New addresses can be loaded  
on every cycle with no degradation of chip performance.  
Features  
• FT pin for user-configurable flow through or pipeline  
operation  
• Single Cycle Deselect (SCD) operation  
• 2.5 V or 3.3 V +10%/–10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to Interleaved Pipeline mode  
Flow Through/Pipeline Reads  
The function of the Data Output register can be controlled by  
the user via the FT mode pin (Pin 14). Holding the FT mode  
pin low places the RAM in Flow Through mode, causing  
output data to bypass the Data Output Register. Holding FT  
high places the RAM in Pipeline mode, activating the rising-  
edge-triggered Data Output Register.  
• Byte Write (BW) and/or Global Write (GW) operation  
• Internal self-timed write cycle  
• Automatic power-down for portable applications  
• JEDEC-standard 100-lead TQFP package  
• Pb-Free 100-lead TQFP package available  
Byte Write and Global Write  
Functional Description  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the Byte Write  
control inputs.  
Applications  
The GS832018/32/36T is a 37,748,736-bit high performance  
synchronous SRAM with a 2-bit burst address counter.  
Although of a type originally developed for Level 2 Cache  
applications supporting high performance CPUs, the device  
now finds application in synchronous SRAM applications,  
ranging from DSP main store to networking chip set support.  
Sleep Mode  
Low power (Sleep mode) is attained through the assertion  
(High) of the ZZ signal, or by stopping the clock (CK).  
Memory data is retained during Sleep mode.  
Controls  
Addresses, data I/Os, chip enables (E1, E2, E3), address burst  
control inputs (ADSP, ADSC, ADV), and write control inputs  
(Bx, BW, GW) are synchronous and are controlled by a  
positive-edge-triggered clock input (CK). Output enable (G)  
and power down control (ZZ) are asynchronous inputs. Burst  
Core and Interface Voltages  
The GS832018/32/36T operates on a 2.5 V or 3.3 V power  
supply. All input are 3.3 V and 2.5 V compatible. Separate  
output power (V  
) pins are used to decouple output noise  
DDQ  
from the internal circuits and are 3.3 V and 2.5 V compatible.  
Parameter Synopsis  
-250 -225 -200 -166 -150 -133 Unit  
t
2.5 2.7 3.0 3.5 3.8 4.0 ns  
4.0 4.4 5.0 6.0 6.6 7.5 ns  
KQ  
Pipeline  
3-1-1-1  
tCycle  
Curr (x18) 285 265 245 220 210 185 mA  
Curr (x32/x36) 350 320 295 260 240 215 mA  
t
6.5 7.0 7.5 8.0 8.5 8.5 ns  
6.5 7.0 7.5 8.0 8.5 8.5 ns  
KQ  
Flow  
Through  
2-1-1-1  
tCycle  
Curr (x18) 205 195 185 175 165 155 mA  
Curr (x32/x36) 235 225 210 200 190 175 mA  
Rev: 1.02 10/2004  
1/25  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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与GS832018T-166相关器件

型号 品牌 获取价格 描述 数据表
GS832018T-166I GSI

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 		2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-166IT GSI

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 		Cache SRAM, 2MX18, 8ns, CMOS, PQFP100, TQFP-100
GS832018T-166IV GSI

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 		2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-166IVT GSI

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 		Cache SRAM, 2MX18, 8ns, CMOS, PQFP100, TQFP-100
GS832018T-166V GSI

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 		2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-166VT GSI

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 		Cache SRAM, 2MX18, 8ns, CMOS, PQFP100, TQFP-100
GS832018T-200 GSI

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 		2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-200I GSI

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 		2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-200IV GSI

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 		2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-200IVT GSI

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 		Cache SRAM, 2MX18, 7.5ns, CMOS, PQFP100, TQFP-100

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