Datasheet > GS8161Z36GD-166IT

GS8161Z36GD-166IT

更新时间： 2024-11-20 10:51:19

品牌	Logo	应用领域
GSI		静态存储器内存集成电路
页数	文件大小	规格书
36页	939K
描述
ZBT SRAM, 512KX36, 7ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

GS8161Z36GD-166IT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	BGA,
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.B	HTS代码：	8542.32.00.41
风险等级：	5.6	最长访问时间：	7 ns
其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e1	长度：	15 mm
内存密度：	18874368 bit	内存集成电路类型：	ZBT SRAM
内存宽度：	36	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	524288 words	字数代码：	512000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	512KX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	最大供电电压 (Vsup)：	2.7 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	13 mm

GS8161Z36GD-166IT 数据手册

浏览型号GS8161Z36GD-166IT的Datasheet PDF文件第2页

浏览型号GS8161Z36GD-166IT的Datasheet PDF文件第3页

浏览型号GS8161Z36GD-166IT的Datasheet PDF文件第4页

浏览型号GS8161Z36GD-166IT的Datasheet PDF文件第5页

浏览型号GS8161Z36GD-166IT的Datasheet PDF文件第6页

浏览型号GS8161Z36GD-166IT的Datasheet PDF文件第7页

GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)

100-Pin TQFP

Commercial Temp

Industrial Temp

250 MHz–133 MHz

18Mb Pipelined and Flow Through

Synchronous NBT SRAM

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable, ZZ and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• User-configurable Pipeline and Flow Through mode

• NBT (No Bus Turn Around) functionality allows zero wait

read-write-read bus utilization

• Fully pin-compatible with both pipelined and flow through

NtRAM™, NoBL™ and ZBT™ SRAMs

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 2.5 V or 3.3 V +10%/–10% core power supply

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 2M, 4M, and 8M devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ pin for automatic power-down

• JEDEC-standard 100-lead TQFP and 165-bump FP-BGA

packages

The GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D) may

be configured by the user to operate in Pipeline or Flow

Through mode. Operating as a pipelined synchronous device,

in addition to the rising-edge-triggered registers that capture

input signals, the device incorporates a rising-edge-triggered

output register. For read cycles, pipelined SRAM output data is

temporarily stored by the edge triggered output register during

the access cycle and then released to the output drivers at the

next rising edge of clock.

Functional Description

The GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D) is an

18Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like

ZBT, NtRAM, NoBL or other pipelined read/double late write

or flow through read/single late write SRAMs, allow

utilization of all available bus bandwidth by eliminating the

need to insert deselect cycles when the device is switched from

read to write cycles.

The GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D) is

implemented with GSI's high performance CMOS technology

and is available in JEDEC-standard 100-pin TQFP and

165-bump FP-BGA packages.

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

Pipeline

3-1-1-1

2.5 2.7 3.0 3.4 3.8 4.0 ns

4.0 4.4 5.0 6.0 6.7 7.5 ns

tCycle

Curr ^(x18)

280 255 230 200 185 165 mA

3.3 V

2.5 V

Curr (x32/x36) 330 300 270 230 215 190 mA

Curr ^(x18)275 250 230 195 180 165 mA

Curr (x32/x36) 320 295 265 225 210 185 mA

Flow

Through

2-1-1-1

5.5 6.0 6.5 7.0 7.5 8.5 ns

tCycle

Curr ^(x18)

175 165 160 150 145 135 mA

3.3 V

2.5 V

Curr (x32/x36) 200 190 180 170 165 150 mA

Curr ^(x18)175 165 160 150 145 135 mA

Curr (x32/x36) 200 190 180 170 165 150 mA

Rev: 2.15 11/2004

1/36

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...36

中文翻译

下载PDF

与GS8161Z36GD-166IT相关器件

型号	品牌	获取价格	描述	数据表
GS8161Z36GD-166T	GSI	获取价格	ZBT SRAM, 512KX36, 7ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-200	GSI	获取价格	ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-200IT	GSI	获取价格	ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-200T	GSI	获取价格	ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-225	GSI	获取价格	ZBT SRAM, 512KX36, 6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-250I	GSI	获取价格	ZBT SRAM, 512KX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-250IT	GSI	获取价格	ZBT SRAM, 512KX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-250T	GSI	获取价格	ZBT SRAM, 512KX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GT-133I	GSI	获取价格	ZBT SRAM, 512KX36, 8.5ns, CMOS, PQFP100, TQFP-100
GS8161Z36GT-133IT	GSI	获取价格	ZBT SRAM, 512KX36, 8.5ns, CMOS, PQFP100, TQFP-100

与GS8161Z36GD-166IT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8161Z36GD-166IT

GS8161Z36GD-166IT 技术参数

GS8161Z36GD-166IT 数据手册

与GS8161Z36GD-166IT相关器件

与GS8161Z36GD-166IT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8161Z36GD-166IT

GS8161Z36GD-166IT 技术参数

GS8161Z36GD-166IT 数据手册

与GS8161Z36GD-166IT相关器件

与GS8161Z36GD-166IT相关文章

您还可以找

您在本页遇到什么问题？