Datasheet > GS8161Z36DT-400IT

GS8161Z36DT-400IT

更新时间： 2024-11-19 14:42:23

品牌	Logo	应用领域
GSI		静态存储器内存集成电路
页数	文件大小	规格书
38页	283K
描述
ZBT SRAM, 512KX36, 4ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

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GS8161Z36DT-400IT 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	QFP,	针数：	100
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.61
Is Samacsys：	N	最长访问时间：	4 ns
其他特性：	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	JESD-30 代码：	R-PQFP-G100
内存密度：	18874368 bit	内存集成电路类型：	ZBT SRAM
内存宽度：	36	功能数量：	1
端子数量：	100	字数：	524288 words
字数代码：	512000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	512KX36	封装主体材料：	PLASTIC/EPOXY
封装代码：	QFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK	并行/串行：	PARALLEL
最大供电电压 (Vsup)：	2.7 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	GULL WING	端子位置：	QUAD
Base Number Matches：	1

GS8161Z36DT-400IT 数据手册

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Preliminary

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

400 MHz–150 MHz

1.8 V, 2.5 V, or 3.3 V V_DD

100-Pin TQFP & 165-Bump BGA

Commercial Temp

Industrial Temp

18Mb Pipelined and Flow Through

Synchronous NBT SRAM

1.8 V, 2.5 V, or 3.3 V I/O

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable, ZZ and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• User-configurable Pipeline and Flow Through mode

• NBT (No Bus Turn Around) functionality allows zero wait

read-write-read bus utilization

• Fully pin-compatible with both pipelined and flow through

NtRAM™, NoBL™ and ZBT™ SRAMs

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 1.8 V, 2.5 V, or 3.3 V +10%/–10% core power supply

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 2Mb, 4Mb, 8Mb, 36Mb, 72Mb and

144Mb devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ pin for automatic power-down

• JEDEC-standard 165-bump BGA package

• RoHS-compliant 100-pin TQFP and 165-bump BGA

packages available

The GS8161Z18D(GT/D)/GS8161Z32D(D)/

GS8161Z36D(GT/D) may be configured by the user to operate

in Pipeline or Flow Through mode. Operating as a pipelined

synchronous device, in addition to the rising-edge-triggered

registers that capture input signals, the device incorporates a

rising-edge-triggered output register. For read cycles, pipelined

SRAM output data is temporarily stored by the edge triggered

output register during the access cycle and then released to the

output drivers at the next rising edge of clock.

Functional Description

The GS8161Z18D(GT/D)/GS8161Z32D(D)/

GS8161Z36D(GT/D) is an 18Mbit Synchronous Static SRAM.

GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other

pipelined read/double late write or flow through read/single

late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS8161Z18D(GT/D)/GS8161Z32D(D)/

GS8161Z36D(GT/D) is implemented with GSI's high

performance CMOS technology and is available in JEDEC-

standard 165-bump BGA package.

Parameter Synopsis

-400

-375

2.5

2.66

-333

2.5

3.3

-250

-200

-150

Unit

2.5

4.0

3.0

5.0

3.8

6.7

Pipeline

3-1-1-1

tCycle

Curr (x18)

Curr (x36)

TBD

4.0

4.2

4.5

5.5

6.5

7.5

Flow

Through

2-1-1-1

tCycle

Curr (x18)

Curr (x36)

TBD

Rev: 1.00 6/2011

1/38

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...38

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与GS8161Z36DT-400IT相关器件

型号	品牌	获取价格	描述	数据表
GS8161Z36GD-133IT	GSI	获取价格	ZBT SRAM, 512KX36, 8.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-133T	GSI	获取价格	ZBT SRAM, 512KX36, 8.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-150T	GSI	获取价格	ZBT SRAM, 512KX36, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-166I	GSI	获取价格	ZBT SRAM, 512KX36, 7ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-166IT	GSI	获取价格	ZBT SRAM, 512KX36, 7ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-166T	GSI	获取价格	ZBT SRAM, 512KX36, 7ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-200	GSI	获取价格	ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-200IT	GSI	获取价格	ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-200T	GSI	获取价格	ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161Z36GD-225	GSI	获取价格	ZBT SRAM, 512KX36, 6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

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