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GS8160FZ36DGT-6.5I PDF预览

GS8160FZ36DGT-6.5I

更新时间: 2024-09-18 14:52:43
品牌 Logo 应用领域
GSI /
页数 文件大小 规格书
20页 226K
描述
100 TQFP

GS8160FZ36DGT-6.5I 数据手册

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GS8160FZ18/36DGT-6.5  
6.5 ns  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
18Mb Pipelined and Flow Through  
Synchronous NBT SRAMs  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
Features  
Functional Description  
• NBT (No Bus Turn Around) functionality allows zero wait  
read-write-read bus utilization; Fully pin-compatible with  
both pipelined and flow through NtRAM™, NoBL™ and  
ZBT™ SRAMs  
• Flow Through mode operation  
• 2.5 V or 3.3 V +10%/10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• LBO pin for Linear or Interleave Burst mode  
• Pin compatible with 2Mb, 4Mb, 8Mb, 36Mb, 72Mb and  
144Mb devices  
• Byte write operation (9-bit Bytes)  
• 3 chip enable signals for easy depth expansion  
• ZZ Pin for automatic power-down  
The GS8160FZ18/36DGT is an 18Mbit Synchronous Static  
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or  
other pipelined read/double late write or flow through read/  
single late write SRAMs, allow utilization of all available bus  
bandwidth by eliminating the need to insert deselect cycles  
when the device is switched from read to write cycles.  
Because it is a synchronous device, address, data inputs, and  
read/ write control inputs are captured on the rising edge of the  
input clock. Burst order control (LBO) must be tied to a power  
rail for proper operation. Asynchronous inputs include the  
Sleep mode enable (ZZ) and Output Enable. Output Enable can  
be used to override the synchronous control of the output  
drivers and turn the RAM's output drivers off at any time.  
Write cycles are internally self-timed and initiated by the rising  
edge of the clock input. This feature eliminates complex off-  
chip write pulse generation required by asynchronous SRAMs  
and simplifies input signal timing.  
• RoHS-compliant 100-lead TQFP package available  
Parameter Synopsis  
-6.5  
Unit  
t
6.5  
6.5  
ns  
ns  
KQ  
Flow Through  
2-1-1-1  
tCycle  
Curr (x18)  
Curr (x36)  
205  
225  
mA  
mA  
Rev: 1.00 10/2013  
1/20  
© 2013, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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