GS8160E18/32/36DGT-xxxV
333 MHz–150 MHz
100-Pin TQFP
Commercial Temp
Industrial Temp
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Dual Cycle Deselect (SDCD) operation
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
DCD Pipelined Reads
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• RoHS-compliant 100-lead TQFP package available
The GS8160E18/32/36DGT-xxxV is a DCD (Dual Cycle
Deselect) pipelined synchronous SRAM. SCD (Single Cycle
Deselect) versions are also available. DCD SRAMs pipeline
disable commands to the same degree as read commands. DCD
RAMs hold the deselect command for one full cycle and then
begin turning off their outputs just after the second rising edge
of clock.
Functional Description
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Applications
The GS8160E18/32/36DGT-xxxV is an 18,874,368-bit high
performance synchronous SRAM with a 2-bit burst address
counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM
applications, ranging from DSP main store to networking chip
set support.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
Core and Interface Voltages
The GS8160E18/32/36DGT-xxxV operates on a 1.8 V or 2.5 V
power supply. All inputs are 1.8 V or 2.5 V compatible.
Separate output power (V
) pins are used to decouple
DDQ
output noise from the internal circuits and are 1.8 V or 2.5 V
compatible.
Parameter Synopsis
-333
-250
-200
-150
Unit
t
3.0
3.0
3.0
4.0
3.0
5.0
3.8
6.7
ns
ns
KQ
Pipeline
3-1-1-1
tCycle
Curr (x18)
Curr (x32/x36)
305
360
245
285
205
235
175
195
mA
mA
t
5.0
5.0
5.5
5.5
6.5
6.5
7.5
7.5
ns
ns
KQ
Flow
Through
2-1-1-1
tCycle
Curr (x18)
Curr (x32/x36)
235
265
215
245
205
225
190
205
mA
mA
Rev: 1.03a 9/2013
1/22
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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