5秒后页面跳转
GS81332DT19CE-250MQ PDF预览

GS81332DT19CE-250MQ

更新时间: 2024-11-13 14:57:07
品牌 Logo 应用领域
GSI /
页数 文件大小 规格书
43页 1864K
描述
165 CCGA

GS81332DT19CE-250MQ 数据手册

 浏览型号GS81332DT19CE-250MQ的Datasheet PDF文件第2页浏览型号GS81332DT19CE-250MQ的Datasheet PDF文件第3页浏览型号GS81332DT19CE-250MQ的Datasheet PDF文件第4页浏览型号GS81332DT19CE-250MQ的Datasheet PDF文件第5页浏览型号GS81332DT19CE-250MQ的Datasheet PDF文件第6页浏览型号GS81332DT19CE-250MQ的Datasheet PDF文件第7页 
GS82612DT19/37CE/LE-350M/250M (S/Q/V)  
GS81332DT19/37CE/LE-350M/250M (S/Q/V)  
GS8692DT19/37CE/LE-350M/250M (S/Q/V)  
350 MHz–250 MHz  
Rad-Hard SRAM  
288Mb/144Mb/72Mb Burst of 4 SigmaQuad-II+  
165-Bump CCGA & LGA  
Military Temp  
1.8 V V  
DD  
TM  
1.8 V and 1.5 V I/O  
Features  
SigmaQuadFamily Overview  
• Aerospace-Level Product  
The GS82612DT19/37, GS81332DT19/37, and  
• 2.0 clock Latency with DLL on  
• 1.0 clock Latency with DLL off  
GS8692DT19/37 are built in compliance with the SigmaQuad-  
II+ SRAM pinout standard for Separate I/O synchronous  
SRAMs. They are 301,989,888-bit (288Mb), 150,994,944-bit  
(144Mb), and 75,497,472-bit (72Mb) SRAMs. These  
SigmaQuad SRAMs are just one element in a family of low  
power, low voltage HSTL I/O SRAMs designed to operate at  
the speeds needed to implement economical high performance  
networking systems.  
• Optional DLL-controlled output timing  
• Can be operated with DLL on or off  
• Simultaneous Read and Write SigmaQuad™ Interface  
• JEDEC-standard pinout and package  
• Dual Double Data Rate interface  
• Byte Write controls sampled at data-in time  
• Burst of 4 Read and Write  
• Dual-Range On-Die Termination (ODT) on Data (D), Byte  
Write (BW), and Clock (K, K) inputs  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
Clocking and Addressing Schemes  
The Rad-Hard SigmaQuad-II+ SRAMs are synchronous  
devices. They employ two input register clock inputs, K and K.  
K and K are independent single-ended clock inputs, not  
differential inputs to a single differential clock input buffer.  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• Data Valid Pin (QVLD) Support  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• 165-bump Ceramic Column Grid Array (CCGA) and  
165-bump Land Grid Array (LGA) packages  
Each internal read and write operation in a SigmaQuad-II+ B4  
RAM is four times wider than the device I/O bus. An input  
data bus de-multiplexer is used to accumulate incoming data  
before it is simultaneously written to the memory array. An  
output data multiplexer is used to capture the data produced  
from a single memory array read and then route it to the  
appropriate output drivers as needed. Therefore, the address  
field of a SigmaQuad-II+ B4 RAM is always two address pins  
less than the advertised index depth (e.g., the 16M x 18 has a  
4M addressable index).  
Radiation Performance  
• Total Ionizing Dose (TID) > 100krads(Si)  
• Single Event Latchup Immunity > 77.3 MeV.cm2/mg (125C)  
Parameter Synopsis  
-350M  
-250M  
4.0 ns  
tKHKH  
tKHQV  
2.86 ns  
0.45 ns  
0.45 ns  
Rev: 1.02a 9/2021  
1/43  
© 2018, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.