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GS81302TT20AGD-550 PDF预览

GS81302TT20AGD-550

更新时间: 2023-12-06 20:13:34
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GSI /
页数 文件大小 规格书
24页 440K
描述
165 BGA

GS81302TT20AGD-550 数据手册

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GS81302TT20/38AGD-633/550/500/450  
633 MHz–450 MHz  
144Mb SigmaDDR-II+TM  
Burst of 2 SRAM  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
1.8 V V  
DD  
1.8 V or 1.5 V I/O  
Features  
Clocking and Addressing Schemes  
• 2.5 Clock Latency  
The GS81302TT20/38AGD SigmaDDR-II+ SRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer.  
TM  
• Simultaneous Read and Write SigmaDDR Interface  
• JEDEC-standard pinout and package  
• Double Data Rate interface  
• Byte Write controls sampled at data-in time  
• Burst of 2 Read and Write  
Each internal read and write operation in a SigmaDDR-II+ B2  
RAM is two times wider than the device I/O bus. An input data  
bus de-multiplexer is used to accumulate incoming data before  
it is simultaneously written to the memory array. An output  
data multiplexer is used to capture the data produced from a  
single memory array read and then route it to the appropriate  
output drivers as needed. Therefore, the address field of a  
SigmaDDR-II+ B2 RAM is always one address pin less than  
the advertised index depth (e.g., the 8M x 18 has a 4M  
addressable index).  
• Dual-Range On-Die Termination (ODT) on Data (D), Byte  
Write (BW), and Clock (K, K) inputs  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• Data Valid Pin (QVLD) Support  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• RoHS-compliant 165-bump BGA package  
SigmaDDR-IIFamily Overview  
The GS81302TT20/38AGD are built in compliance with the  
SigmaDDR-II+ SRAM pinout standard for Common I/O  
synchronous SRAMs. They are 150,994,944-bit (288Mb)  
SRAMs. The GS81302TT20/38AGD SigmaDDR-II+ SRAMs  
are just one element in a family of low power, low voltage  
HSTL I/O SRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
Parameter Synopsis  
-633  
-550  
-500  
2.0 ns  
0.45 ns  
-450  
2.2 ns  
0.45 ns  
tKHKH  
tKHQV  
1.58 ns  
0.45 ns  
1.81 ns  
0.45 ns  
Rev: 1.01 2/2018  
1/24  
© 2017, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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